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DiodesZetex Bipolar Power Transistor NPN 3 A 45 V 4-Pin DPAK Surface Mount ZXT690BKTC

Category Bipolar Power Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.39mm
Length 6.7mm
Model ZXT690BKTC
Width 6.2mm
Mount Type Surface
Series ZXTX
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3.9W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • The device is packaged in a TO-252 4-pin DPAK surface mount format for ease of integration.
  • It has a maximum power dissipation rating of 3.9 watts suited for medium power applications.
  • The transistor has a minimum DC current gain (hFE) of 60 and maximum transition frequency of 150 MHz.
  • Operating temperature range extends from -55°C to 150°C, supporting demanding thermal conditions.
  • The transistor polarity is NPN and it is designed as a single transistor configuration.
  • It conforms to automotive standard AEC-Q101 ensuring reliability in automotive electronics.
  • The device dimensions are 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height.
  • Maximum collector base voltage is 60 V and maximum emitter base voltage is 5 V.

Product Description

DiodesZetex ZXT690BKTC Bipolar Power Transistor is a high-performance NPN transistor designed for electronic and industrial applications requiring reliable switching and amplification.

This device features a maximum collector current of 3 A and collector emitter voltage of 45 V, making it suitable for medium power discrete semiconductor stages. Its TO-252 DPAK surface mount package simplifies mounting into compact PCB designs, supporting automated assembly processes.

The transistor has a minimum DC current gain hFE of 60 and a maximum transition frequency of 150 MHz, enabling efficient high-frequency operation.

Engineered for robust performance, it operates over a wide temperature range from -55°C up to 150°C, including compliance with automotive-grade standard AEC-Q101 for stringent quality and durability.

Dimensions of 6.7 mm length, 6.2 mm width, and 2.39 mm height make it compatible with modern compact electronics assemblies. Maximum power dissipation is 3.9 W.

This transistor has four pins configured in a single transistor arrangement suitable for various power amplification and switching tasks in automotive, industrial, and electronic manufacturing sectors.

The device is packaged in a TO-252 (DPAK) surface mount form factor. Rated for 3 A maximum DC collector current and 45 V collector emitter voltage. Supports high switching frequency with 150 MHz maximum transition frequency.

Operates reliably over -55°C to 150°C, suitable for automotive applications (AEC-Q101 compliant). Compact size enables integration in dense circuit boards. Manufactured in China under rigorous quality controls. Ideal for use in power management, switching regulators, and automotive electronics.

This product is part of the ZXT series from DiodesZetex, available for integration in electronic assembly lines where high reliability and performance are critical. Explore more discrete semiconductor components and bipolar transistors in the Electronics & Electricals category at EnvMart.

DiodesZetex Bipolar Power Transistor NPN 3 A 45 V 4-Pin DPAK Surface Mount ZXT690BKTC
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Frequently Asked Questions

The maximum collector current for this model is 3 A.

The maximum collector-emitter voltage rating is 45 V.

It operates within a temperature range of -55°C to 150°C.

This transistor is packaged in a TO-252 4-pin DPAK surface mount format.

The minimum DC current gain (hFE) is 60.

The maximum power dissipation rating is 3.9 watts.

The maximum transition frequency is 150 MHz.

It conforms to the automotive standard AEC-Q101.

The dimensions are 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height.

The transistor is designed in a single configuration.

The maximum collector-base voltage is 60 V.

The maximum emitter-base voltage rating is 5 V.

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