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onsemi Bipolar Power Transistor, NPN, 3 A, 80 V dc, 40 W, 3-Pin TO-220 TIP31BG
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.53mm |
| Model | TIP31BG |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | TIP31B |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V dc |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 80V dc |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Designed for general purpose amplifier and switching applications.
- Maximum power dissipation of 40 watts ensures robust performance.
- Through-hole mounting suitable for various PCB designs.
- Operating temperature range from -65°C to 150°C for extended environmental use.
- Collector-Emitter saturation voltage maximum 1.2 Vdc at 3 A collector current.
- High current gain bandwidth product of 3.0 MHz minimum at 500 mA collector current.
- Compact TO-220 AB package provides reliable thermal management.
- Manufactured in China with no automotive certification.
Product Description
onsemi TIP31BG Bipolar Power Transistor is an NPN transistor designed for reliable general purpose amplifier and switching applications in electronic circuits. It supports a maximum collector current of 3 amperes and a collector-emitter voltage of 80 V dc, making it suitable for medium power applications.
The device comes in a compact TO-220 3-pin through-hole package that facilitates easy mounting and effective heat dissipation. It is capable of dissipating up to 40 watts of power, ensuring stable operation under demanding conditions.
Operating temperature ranges from -65°C to 150°C, making it well-suited for industrial and commercial environments where temperature variability is a concern.
The transistor features a minimum DC current gain hFE of 10 and a maximum transition frequency ft of 1 MHz, beneficial for switching and amplifier circuits where frequency response is critical.
The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.2 Vdc at 3 A collector current, which provides efficient conduction when fully switched on. The emitter-base voltage maximum rating is 5 V dc, and the maximum collector-base voltage is 80 V dc, ensuring device reliability within these electrical limits.
This product is manufactured in China and does not carry automotive standards, targeting general and industrial electronics applications. Designed for general purpose amplifier and switching applications. Maximum DC collector current of 3 A and collector-emitter voltage of 80 V dc.
Maximum power dissipation rated at 40 W. Through-hole mount type with 3-pin TO-220 package for easy installation. Operating temperature range from -65°C to 150°C. Minimum DC current gain of 10 and transition frequency of 1 MHz.
Compact TO-220 AB package ensuring reliable thermal performance. No automotive certification; manufactured in China.
This transistor is ideal for industrial, laboratory, and commercial electronics projects requiring robust switching and amplification capabilities. It supports use cases in power control circuits, amplifiers, and discrete semiconductor circuits.
Explore more power transistors and semiconductor devices on EnvMart to find suitable components for your electronics design and manufacturing needs.
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Frequently Asked Questions
The maximum collector current for the TIP31BG transistor is 3 A.
The maximum collector-emitter voltage (Vceo) and maximum collector-base voltage (Vcbo) for this model are both 80 V dc.
The TIP31BG transistor can dissipate a maximum power of 40 W.
This model operates within a temperature range of -65°C to 150°C.
The TIP31BG comes in a compact TO-220 package type, which is suitable for through-hole mounting.
The minimum DC current gain (hFE) for the TIP31BG is 10.
The maximum emitter-base voltage (VEBO) for this transistor is 5 V dc.
The maximum transition frequency (ft) for this model is 1 MHz.
The TIP31BG transistor has a total of 3 pins.
The TIP31BG is an NPN bipolar power transistor.
This transistor is designed for general purpose amplifier and switching applications in electronic circuits.
The TIP31BG is manufactured in China.
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