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onsemi Bipolar Power Transistor NPN 10 A 40 V 3-Pin TO-225 MJE200G

Category Bipolar Power Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 27.1mm
Length 8mm
Model MJE200G
Width 3.25mm
Mount Type Through Hole
Series MJE200
Maximum Operating Temperature 150°C
Package Type TO-225
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 8V dc
Maximum Collector Base Voltage VCBO 25V dc
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz

Key Features

  • This transistor offers high DC current gain and low collector-emitter saturation voltage.
  • The device supports a maximum DC collector current of 10 amperes.
  • Maximum collector-emitter voltage rating is 40 volts.
  • Power dissipation capability up to 15 watts.
  • Maximum operating temperature rating of 150 degrees Celsius.
  • Package type is TO-225, suitable for through-hole mounting.
  • It has a single transistor configuration with NPN polarity.
  • Maximum transition frequency of 10 MHz ensuring efficient switching.

Product Description

onsemi MJE200G is a Bipolar Power Transistor featuring an NPN configuration optimized for low voltage, low power, and high gain audio amplifier applications.

This transistor supports a maximum DC collector current of 10 A and a collector-emitter voltage of 40 V, making it suitable for medium power electronics projects and amplifier circuits.

The package type TO-225 allows robust through-hole mounting for secure installation in circuit boards.

Key electrical characteristics include a minimum DC current gain of 10, a maximum power dissipation of 15 W, and a transition frequency of up to 10 MHz, enabling efficient amplification and switching performance.

The transistor features an operating temperature limit up to 150°C, suitable for various industrial and electronic environments requiring thermal stability. Its physical dimensions are height 27.1 mm, length 8 mm, and width 3.25 mm, supporting flexible design integration.

The MJE200G is part of the MJE200 series and manufactured with Pb-Free processes, emphasizing environmental responsibility. This transistor offers high DC current gain and low collector-emitter saturation voltage. The device supports a maximum DC collector current of 10 amperes.

Maximum collector-emitter voltage rating is 40 volts. Power dissipation capability up to 15 watts. Maximum operating temperature rating of 150 degrees Celsius. Package type is TO-225, suitable for through-hole mounting. It has a single transistor configuration with NPN polarity.

Maximum transition frequency of 10 MHz ensuring efficient switching. Dimensions: Height 27.1 mm, Length 8 mm, Width 3.25 mm. The product is Pb-Free and compliant with environmental safety standards. This transistor is ideal for audio amplification, power management, and switching applications in industrial, electronics manufacturing, and laboratory environments.

Browse our Electronics & Electricals category for more discrete semiconductor components and power transistors to suit your electronic design needs.

onsemi Bipolar Power Transistor NPN 10 A 40 V 3-Pin TO-225 MJE200G
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Frequently Asked Questions

The maximum DC collector current for the MJE200G transistor is 10 amperes.

This model has a maximum collector-emitter voltage rating of 40 volts.

The MJE200G can dissipate a maximum power of 15 watts.

The maximum transition frequency of this transistor is 10 MHz, allowing for efficient switching.

The dimensions of this transistor are height 27.1 mm, length 8 mm, and width 3.25 mm.

The maximum operating temperature rating for the MJE200G is 150 degrees Celsius.

This model supports through-hole mounting, suitable for secure installation in circuit boards.

The MJE200G features a single transistor configuration with NPN polarity.

The minimum DC current gain (hFE) for the MJE200G is 10.

The maximum emitter-base voltage (VEBO) is 8V dc, and the maximum collector-base voltage (VCBO) is 25V dc.

The MJE200G is part of the MJE200 series of transistors.

Yes, the MJE200G is manufactured with Pb-Free processes, emphasizing environmental responsibility.

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