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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 27.1mm |
| Length | 8mm |
| Model | MJE200G |
| Width | 3.25mm |
| Mount Type | Through Hole |
| Series | MJE200 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-225 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 8V dc |
| Maximum Collector Base Voltage VCBO | 25V dc |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | 10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 10MHz |
onsemi MJE200G is a Bipolar Power Transistor featuring an NPN configuration optimized for low voltage, low power, and high gain audio amplifier applications.
This transistor supports a maximum DC collector current of 10 A and a collector-emitter voltage of 40 V, making it suitable for medium power electronics projects and amplifier circuits.
The package type TO-225 allows robust through-hole mounting for secure installation in circuit boards.
Key electrical characteristics include a minimum DC current gain of 10, a maximum power dissipation of 15 W, and a transition frequency of up to 10 MHz, enabling efficient amplification and switching performance.
The transistor features an operating temperature limit up to 150°C, suitable for various industrial and electronic environments requiring thermal stability. Its physical dimensions are height 27.1 mm, length 8 mm, and width 3.25 mm, supporting flexible design integration.
The MJE200G is part of the MJE200 series and manufactured with Pb-Free processes, emphasizing environmental responsibility. This transistor offers high DC current gain and low collector-emitter saturation voltage. The device supports a maximum DC collector current of 10 amperes.
Maximum collector-emitter voltage rating is 40 volts. Power dissipation capability up to 15 watts. Maximum operating temperature rating of 150 degrees Celsius. Package type is TO-225, suitable for through-hole mounting. It has a single transistor configuration with NPN polarity.
Maximum transition frequency of 10 MHz ensuring efficient switching. Dimensions: Height 27.1 mm, Length 8 mm, Width 3.25 mm. The product is Pb-Free and compliant with environmental safety standards. This transistor is ideal for audio amplification, power management, and switching applications in industrial, electronics manufacturing, and laboratory environments.
Browse our Electronics & Electricals category for more discrete semiconductor components and power transistors to suit your electronic design needs.
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