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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 20.35mm |
| Length | 15.2mm |
| Model | TIP3055G |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | TIP3055G |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-93 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V dc |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V dc |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Power Dissipation Pd | 90W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi TIP3055G Bipolar Power Transistor is a robust component intended for general purpose switching and amplifier applications in electronic circuits. Featuring an NPN transistor polarity and single configuration, it handles a maximum DC collector current of 15 A and can withstand voltages up to 60 V dc.
The transistor comes in a through-hole mount type with a 3-pin SOT-93 package that facilitates easy integration onto printed circuit boards. It supports a maximum power dissipation of 90 W, ensuring stable operation in moderate to high power electronic equipment.
Operating over a broad temperature range from -65°C to 150°C, the TIP3055G maintains reliable performance in diverse environmental conditions. With a minimum DC current gain of 5 and maximum transition frequency of 1 MHz, it suits various amplifier and switching tasks.
Physical dimensions measure 20.35 mm in height, 15.2 mm in length, and 4.9 mm in width. This power transistor is commonly used in industrial electronics, manufacturing equipment, and electronic circuit prototyping requiring robust amplification and switching capabilities.
Supports maximum DC collector current of 15 amperes. Maximum collector emitter voltage is 60 volts dc. Through-hole mount type with 3-pin SOT-93 package for easy PCB integration. High maximum power dissipation of 90 watts enables effective switching applications.
Wide temperature range operating from -65°C to 150°C for reliable performance. Transistor polarity is NPN with single transistor configuration. Typical DC current gain (hFE) ranges from 5 to over 20 depending on operating conditions.
Maximum transition frequency of 1 MHz suitable for switching and amplifier circuits. Physical dimensions: height 20.35 mm, length 15.2 mm, width 4.9 mm. Country of origin is China, manufactured as new condition product. Discover more electronic components and Bipolar Power Transistors on EnvMart to build efficient and reliable designs for your industrial and laboratory projects.
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