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onsemi Bipolar Transistor 8 A NPN, 80 V dc, TO-252 Surface Mount, 20W Power Dissipation MJD44H11-1G
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD44H11-1G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | MJD44H11 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 80V dc |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Maximum DC collector current of 8 amperes for robust power handling.
- Maximum collector-emitter voltage of 80 volts suitable for power switching.
- 20 watts maximum power dissipation ensuring reliability in demanding circuits.
- TO-252 package with 4-pin DPAK form factor for efficient heat dissipation.
- Wide operating temperature range from -55°C to 150°C for industrial use.
- Minimum DC current gain (hFE) of 40 enhances amplification performance.
- Fast switching speeds suitable for switching regulators and converters.
- Electrically similar to D44H and D45H series, simplifying design upgrades.
Product Description
onsemi MJD44H11-1G Bipolar Transistor is a high-performance power transistor designed for general purpose power switching and driver stage applications in electronics such as switching regulators, converters, and power amplifiers. It features an 8 ampere maximum DC collector current and 80 V collector-emitter voltage, delivering reliable operation under demanding electrical conditions.
This transistor is packaged in a TO-252 (DPAK) surface mount format with 4 pins, which facilitates efficient heat dissipation and compact circuit board layout. Its 20 watt maximum power dissipation supports high-power applications while the transistor polarity is NPN, making it suitable for a wide range of electronic designs.
The device operates reliably across a wide temperature range from -55°C to 150°C, making it fit for use in industrial and automotive environments. It offers a minimum DC current gain (hFE) of 40, with a maximum emitter-base voltage of 5 V dc and a maximum transition frequency of 1 MHz, ensuring good switching speed and amplification properties.
Complementary to popular D44H/D45H series, these devices feature a low collector-emitter saturation voltage (VCE(sat)) of 1.0 V max at 8 A, enhancing power efficiency in switching circuits. The onsemi MJD44H11-1G is AEC-Q101 qualified, meeting automotive reliability standards, and is Pb-Free, aligning with environmental safety requirements.
Maximum DC collector current of 8 amperes. Maximum collector-emitter voltage of 80 volts DC. TO-252 surface mount package with 4 pins. Maximum power dissipation of 20 watts. Wide operating temperature range of -55°C to 150°C.
NPN transistor polarity. Minimum current gain of 40. Fast switching speeds, 1 MHz transition frequency. AEC-Q101 automotive standard qualified. Dimensions: 6.73 mm length, 6.22 mm width, 2.38 mm height.
Ideal for industrial, automotive, and manufacturing applications involving power amplification, switching regulators, and converters. This transistor provides versatility for power management and signal amplification with dependable performance.
Explore our extensive catalog of semiconductors and power transistors on EnvMart for high-quality components suitable for diverse electronic design needs.
Explore more products in our Bipolar Power Transistor category.
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Frequently Asked Questions
The MJD44H11-1G has a maximum DC collector current of 8 amperes.
This model can handle a maximum collector-emitter voltage of 80 volts DC.
The maximum power dissipation for this transistor is 20 watts.
It operates over a wide temperature range from -55°C to 150°C.
The minimum DC current gain (hFE) for this transistor is 40.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
The maximum transition frequency is 1 MHz.
It is an NPN bipolar transistor, suitable for power switching applications.
Yes, this model is AEC-Q101 qualified, meeting automotive reliability standards.
The maximum emitter-base voltage (VEBO) is 5 V DC.
The MJD44H11-1G has a pin count of 4.
It is suitable for general purpose power switching and driver stage applications, such as switching regulators and converters.
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