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onsemi 15A NPN Bipolar Power Transistor, 60V, 115W TO-204 Package 2N3055G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.7mm |
| Length | 39.37mm |
| Model | 2N3055G |
| Width | 26.67mm |
| Mount Type | Through Hole |
| Series | 2N3055 |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 115W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 2.5MHz |
Key Features
- Maximum DC collector current of 15 amperes for heavy-duty applications.
- Maximum collector emitter voltage rating of 60 volts ensuring robust operation.
- TO-204 metal package with through-hole mount for reliable installation.
- Maximum power dissipation rated at 115 watts to handle high thermal loads.
- Complementary transistor pair with MJ2955 PNP for amplifier circuit designs.
- Operating temperature range from -65°C to 200°C suitable for diverse environments.
- Pin count of 2 enabling simple circuit integration.
- Maximum transition frequency of 2.5 MHz allowing moderate switching speeds.
Product Description
onsemi 2N3055G is a high power NPN bipolar transistor rated for 15A collector current and 60V collector emitter voltage, housed in a robust TO-204 metal package designed for through-hole mounting. It offers a maximum power dissipation capacity of 115W making it suitable for demanding electronic amplifier and switching applications across industrial, manufacturing, and electronic component uses.
The 2N3055G transistor features a maximum collector base voltage of 100V and a maximum emitter base voltage of 7V, providing stable operation under high voltage conditions. It operates efficiently within a broad temperature range from -65°C to 200°C, accommodating harsh environmental conditions.
This transistor is single configuration with two pins, facilitating easy circuit placement and soldering. Its minimum DC current gain of 5 and maximum switching frequency of 2.5 MHz make it suitable for audio, power, and general switching electronic circuits.
The onsemi 2N3055G pair with MJ2955 PNP transistor provides a complementary solution for high power amplifier designs. Its package dimensions are 39.37 mm length by 26.67 mm width and 20.7 mm height, ensuring compatibility with standard power transistor mounts.
Maximum collector current of 15A for heavy load switching. Collector emitter voltage rated at 60V for stable operation. High power dissipation of 115W minimizes overheating. Two-pin TO-204 metal package supports through-hole mounting.
Wide operating temperature range (-65°C to 200°C) enhances reliability. Suitable for industrial, manufacturing, and electronic component applications. Compatible complementary transistor MJ2955 available separately. Designed for high power amplifier and switching circuits.
Robust construction with stable electrical characteristics. Explore more Bipolar Power Transistors and electronic components in the Electronics & Electricals category of EnvMart for your industry needs.
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Frequently Asked Questions
The maximum DC collector current of the 2N3055G transistor is 15 amperes, making it suitable for heavy-duty applications.
This model has a maximum collector-emitter voltage rating of 60 volts, ensuring robust operation under high voltage conditions.
The maximum power dissipation rated for this transistor is 115 watts, allowing it to handle high thermal loads effectively.
The 2N3055G operates efficiently within a temperature range from -65°C to 200°C, accommodating harsh environmental conditions.
It is housed in a TO-204 metal package designed for through-hole mounting, facilitating reliable installation.
This model features a pin count of 2, enabling simple circuit integration and soldering.
The maximum transition frequency of this transistor is 2.5 MHz, allowing for moderate switching speeds.
The minimum DC current gain (hFE) for this transistor is 5, which is suitable for various applications.
The maximum collector-base voltage rating for the 2N3055G is 100 volts, providing stable operation under high voltage conditions.
The maximum emitter-base voltage (VEBO) for the 2N3055G is 7 volts, ensuring reliable performance in circuits.
The 2N3055G can be paired with the MJ2955 PNP transistor, providing a complementary solution for high power amplifier designs.
The dimensions of this model are 39.37 mm in length, 26.67 mm in width, and 20.7 mm in height.
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