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onsemi Transistor PN2222ATA, 1 A NPN, 40 V, 3-Pin TO-92

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onsemi Transistor PN2222ATA, 1 A NPN, 40 V, 3-Pin TO-92

Name: onsemi Transistor PN2222ATA, 1 A NPN, 40 V, 3-Pin TO-92
Brand: onsemi
SKU: 361663
Price: 0.11 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	20.95mm
Length	5.2mm
Model	PN2222ATA
Width	4.19mm
Mount Type	Through Hole
Series	PN2222A
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
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RS Stock No.	739-0381Brand: onsemiManufacturers Part No.: PN2222ATA
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	35
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	75V
Maximum Power Dissipation Pd	625mW
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single
Maximum Transition Frequency ft	300MHz

Key Features

TO-92 package with 3 pins supports through hole mounting.
Transistor configuration is single NPN type suitable for switching and amplification.
Maximum power dissipation is 625 mW, enabling reliable operation in various circuits.
Operating temperature range spans from -55°C to 150°C for robust performance.
Maximum transition frequency of 300 MHz allows moderate speed switching applications.
Collector base voltage maximum rating is 75 V ensuring a wide operational margin.
Emitter base voltage rating up to 6 V safeguards against reverse voltages.
Package dimensions approximately 20.95 mm height, 5.2 mm length, and 4.19 mm width.

Product Description

onsemi PN2222ATA is a small signal NPN bipolar transistor designed for discrete semiconductor applications, rated for a maximum collector current of 1 A and collector-emitter voltage of 40 V. Packaged in a compact TO-92 3-pin form factor, it enables easy through-hole mounting in diverse electronic circuits.

Its single transistor configuration and NPN polarity make it suitable for general-purpose switching and amplification tasks in industrial, laboratory, electronic, and manufacturing sectors. The transistor can dissipate up to 625 mW of power safely and operates reliably within a broad temperature range of -55°C to 150°C, thus supporting demanding operational environments.

The maximum transition frequency of 300 MHz allows this transistor to be used in moderate frequency applications. The device's collector-base voltage maximum rating is 75 V and emitter-base voltage rating is 6 V, providing robust voltage handling capabilities to ensure reliable circuit performance.

Key mechanical dimensions include a height of 20.95 mm, a length of 5.2 mm, and a width of 4.19 mm, fitting standard PCB layouts for through-hole installations. Originating from China, this transistor draws on Fairchild Semiconductor's established bipolar junction transistor technologies, now under onsemi brand ownership.

TO-92 package with 3-pin through-hole mounting design. Supports up to 1 A collector current and 40 V collector-emitter voltage. Power dissipation rated at 625 mW for dependable usage. Wide operating temperature range from -55°C to 150°C.

Transition frequency maximum at 300 MHz for switching applications. Collector-base voltage maximum is 75 V. Emitter-base voltage maximum is 6 V. Compact size with dimensions of height 20.95 mm, length 5.2 mm, and width 4.19 mm.

Manufactured in China. This transistor is well-suited for electronics manufacturing, industrial signal switching, and general electronics design requiring reliable small-signal amplification. Explore additional onsemi semiconductor components and discrete NPN transistors suitable for diverse electronic designs on EnvMart.

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