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onsemi Darlington Transistor NPN 500 mA 30 V TO-92 3-Pin hFE 5000 KSP13BU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.58mm |
| Length | 4.58mm |
| Model | KSP13BU |
| Mount Type | Through Hole |
| Series | KSP13 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-0344Brand: onsemiManufacturers Part No.: KSP13BU |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 500mA |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 5000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Collector Cut-off Current | 0.0001mA |
| Maximum Power Dissipation Pd | 625mW |
Key Features
- Maximum continuous collector current of 500 mA.
- Collector-emitter voltage rating up to 30 V.
- High DC current gain (hFE) of 5000.
- Compact 3-pin TO-92 through-hole package.
- Maximum power dissipation of 625 mW.
- Operating temperature range from -55°C to 150°C.
- NPN transistor polarity suitable for amplification and switching.
- Maximum emitter base voltage of 10 V.
Product Description
onsemi KSP13BU is a high-gain NPN Darlington transistor designed for amplification and switching purposes in electronic circuits. Encapsulated in a compact TO-92 package with 3 pins, it supports a maximum continuous collector current of 500 mA and a collector-emitter voltage of up to 30 V, making it suitable for low-power signal amplification tasks.
This transistor features a very high DC current gain (hFE) of 5000, enabling efficient amplification of weak signals. It is constructed for through-hole mounting on printed circuit boards for easy installation and maintenance.
The device operates reliably over a temperature range from -55°C to 150°C, ensuring stable performance in diverse environmental conditions. Its power dissipation rating of 625 mW allows for efficient heat management during operation.
The maximum emitter-base voltage is limited to 10 V, and the saturation voltage between collector and emitter is 1.5 V, specifications that ensure the transistor’s robustness under switching loads.
The single-element chip architecture of this Darlington pair transistor makes it ideal for various applications, including audio amplifiers, signal processing circuits, and general switching functions in industrial, automotive, and consumer electronics.
Maximum continuous collector current of 500 mA. Collector-emitter voltage rating up to 30 V. High DC current gain (hFE) of 5000. Compact 3-pin TO-92 through-hole package. Maximum power dissipation of 625 mW. Operating temperature range: -55°C to 150°C.
NPN transistor polarity for amplification and switching. Emitter base voltage maximum of 10 V. Collector saturation voltage maximum of 1.5 V. Single element per chip in Darlington configuration.
This product is suitable for electronics manufacturing, hobbyist projects, laboratory testing, and embedded system designs. It is part of onsemi’s KSP13 series, ensuring compatibility in circuit upgrades or repairs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 500 mA.
This transistor has a collector-emitter voltage rating of up to 30 V.
The DC current gain (hFE) of this model is 5000, allowing for efficient amplification of weak signals.
The maximum power dissipation for this transistor is 625 mW.
The operating temperature range for this model is from -55°C to 150°C.
It is encapsulated in a compact TO-92 package with 3 pins for through-hole mounting.
The maximum emitter-base voltage for this model is 10 V.
This transistor features a single element per chip in a Darlington configuration.
The maximum collector saturation voltage for this model is 1.5 V.
The height and length of this transistor are both 4.58 mm.
This model is suitable for applications including audio amplifiers, signal processing circuits, and general switching functions in various electronic devices.
Yes, this transistor is suitable for electronics manufacturing, hobbyist projects, laboratory testing, and embedded system designs.
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