Toshiba P-Channel MOSFET, 330 mA, 20 V Enhancement, 3-Pin UFM Package SSM3J36TU(TE85L)

Toshiba SSM3J36TU(TE85L) is a high-quality P-Channel MOSFET designed for electronic components and power connector applications. It features an enhancement channel mode optimized for efficient switching with a maximum continuous drain current of 330 mA and a maximum drain-source voltage of 20 V. This device is housed in a compact 3-pin UFM surface mount package suitable for space-constrained circuit board designs.

The MOSFET has a maximum power dissipation rating of 500 mW which supports reliable operation under various load conditions. Its forward voltage of 880 mV and a typical gate charge of 1.2 nC at Vgs make it well-suited for low-power signal switching and amplification tasks in electronic circuits.

Operating temperature specifications range from -55°C to 150°C, ensuring robust performance across industrial and commercial environments. Additional electrical characteristics include a maximum drain-source resistance of 3.6 Ω and a gate-source voltage range of -8 V to +8 V, providing versatility for different circuit requirements.

With dimensions of 2.1 mm length, 1.7 mm width, and 700 μm height, this surface-mount MOSFET is easy to integrate into PCB layouts. Manufactured in Japan, the product ensures high manufacturing standards and product integrity.

This semiconductor component is suitable for applications in industrial electronics, automotive electronics, power management modules, and general-purpose electronic device manufacturing.

This device features an enhancement mode channel with 3 pins in a UFM surface mount package. Maximum power dissipation is rated at 500 mW for reliable operation. The typical forward voltage is 880 mV with a gate charge of 1.2 nC at Vgs.

Operating temperature ranges from -55°C minimum to a maximum of 150°C. The maximum drain-source resistance is 3.6 Ω ensuring efficient switching performance. Maximum gate-source voltage tolerance is from -8 V to +8 V. Compact dimensions include length 2.1 mm, width 1.7 mm, and height 700 μm.

Manufactured in Japan, this MOSFET offers quality and performance for electronic circuit applications. Explore more Semiconductor solutions and MOSFET devices in the Electronics & Electricals category at EnvMart.