onsemi Small Signal PNP Transistor, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage -30 BC858CLT3G

The onsemi BC858CLT3G is a small signal PNP bipolar transistor designed for a variety of industrial and electronic applications including switching, amplification, and control functions.

It features a maximum DC collector current of -100 mA and a maximum collector-emitter voltage rating of -30 V, making it ideal for low-power circuit implementations.

Encapsulated in a compact 3-pin SOT-23 surface mount package, the transistor offers high current gain with a minimum DC current gain (hFE) of 420, ensuring efficient amplification performance.

This transistor supports a wide operating temperature range of -55°C to 150°C, suitable for harsh and demanding industrial environments such as automotive electronics, instrumentation, and general industrial controls.

The maximum power dissipation is rated at 300 mW, allowing safe operation under moderate power conditions without risk of damage. Its transition frequency of 100 MHz supports high-speed switching applications, enhancing the versatility of the transistor in modern electronic designs.

Certified to the automotive AEC-Q101 standard, the BC858CLT3G provides assured reliability and quality for safety-critical automotive systems. The physical dimensions (Length 3.04 mm, Width 2.64 mm, Height 1.11 mm) enable easy integration in dense PCB layouts with minimal space requirements.

Maximum DC collector current of -100 mA. Maximum collector-emitter voltage of -30 V. 3-pin SOT-23 surface mount package. High DC current gain (hFE) of 420. Wide temperature range from -55°C to 150°C. Maximum power dissipation of 300 mW.

Transition frequency of 100 MHz. Automotive compliant to AEC-Q101 standard. Single transistor configuration, PNP polarity. Compact physical dimensions for PCB integration.

This onsemi transistor is widely used in industrial, automotive, consumer electronics, and laboratory applications where reliable small signal amplification and switching are required. It supports efficient circuit designs with its low voltage and current specifications, compact packaging, and stable performance across temperature variations.

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