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onsemi Small Signal NPN Transistor BC846BDW1T1G, 100 mA, 65 V, 6-Pin SOT-363 Package

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onsemi Small Signal NPN Transistor BC846BDW1T1G, 100 mA, 65 V, 6-Pin SOT-363 Package

Name: onsemi Small Signal NPN Transistor BC846BDW1T1G, 100 mA, 65 V, 6-Pin SOT-363 Package
Brand: onsemi
SKU: 351134
Price: 0.08 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	BC846BDW1T1G
Width	2.2mm
Mount Type	Surface
Series	BC846BDW1
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
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RS Stock No.	690-0088PBrand: onsemiManufacturers Part No.: BC846BDW1T1G
Pin Count	6
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	380mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	100MHz

Key Features

This transistor features a 6-pin SOT-363 surface mount package suitable for compact circuit designs.
Maximum DC collector current is rated at 100 mA for low power applications.
Maximum collector-emitter voltage (Vceo) is 65 V, providing reliable operation in switching circuits.
It has a minimum DC current gain (hFE) of 200 ensuring efficient signal amplification.
The transistor offers a maximum power dissipation of 380 mW, supporting moderate power handling.
Designed with an NPN polarity and isolated configuration for precise control and switching.
Operating temperature ranges from -55°C to 150°C for stable performance in various environments.
Package dimensions are 2.2 mm length, 2.2 mm width, and 1.1 mm height for space-constrained applications.

Product Description

onsemi BC846BDW1T1G is a small signal NPN bipolar transistor designed for electronic circuits requiring 100 mA maximum collector current and 65 V maximum collector-emitter voltage.

Housed in a compact 6-pin SOT-363 surface mount package, this transistor is ideal for space-sensitive PCB layouts. It features an isolated transistor configuration with NPN polarity, ensuring excellent switching and amplification characteristics.

The device supports a maximum power dissipation of 380 mW, making it suitable for low to medium power applications. It offers a minimum DC current gain (hFE) of 200, enabling efficient signal amplification in various electronics.

Its operating temperature range from -55°C to 150°C allows reliable performance in demanding industrial and automotive environments. The transistor complies with the AEC-Q101 automotive standard, underscoring its robustness for automotive electronics and harsh conditions.

With a maximum transition frequency of 100 MHz, the BC846BDW1T1G transistor supports high-frequency applications such as RF amplifiers and switching circuits. This transistor comes with a 6-pin SOT-363 package measuring 2.2 mm x 2.2 mm x 1.1 mm, suitable for compact designs.

It is applicable in industrial, automotive, and general electronic circuit manufacturing. The device is surface mounted, enabling automated assembly and consistent quality.

Choose onsemi BC846BDW1T1G for reliable, high-performance discrete transistor needs in electronic assemblies. Explore more discrete semiconductor products from EnvMart to find complementary components for your circuit design projects.

Explore more products in our Bipolar Transistors category.

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Frequently Asked Questions

The maximum DC collector current for this transistor is rated at 100 mA, making it suitable for low power applications.

The maximum collector-emitter voltage (Vceo) is 65 V, providing reliable operation in switching circuits.

It is housed in a 6-pin SOT-363 surface mount package, with dimensions of 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) is 200, ensuring efficient signal amplification.

The maximum power dissipation for this model is 380 mW, supporting moderate power handling.

The operating temperature range is from -55°C to 150°C, allowing stable performance in various environments.

Yes, it complies with the AEC-Q101 automotive standard, indicating its suitability for automotive applications.

The maximum transition frequency is 100 MHz, which supports high-frequency applications such as RF amplifiers and switching circuits.

This model features an isolated transistor configuration with NPN polarity, ensuring excellent switching and amplification characteristics.

The maximum emitter-base voltage (VEBO) is 6 V and the maximum collector-base voltage (VCBO) is 80 V.

This transistor is applicable in industrial, automotive, and general electronic circuit manufacturing, particularly in low to medium power applications.

The mount type for this transistor is surface mount, which facilitates automated assembly and consistent quality.