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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD117T4G |
| Mount Type | Surface |
| Series | MJD112 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-1505Brand: onsemiManufacturers Part No.: MJD117T4G |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 2A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 20μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
onsemi MJD117T4G is a PNP Darlington Transistor designed to provide high current gain and switching performance. Featuring a maximum continuous collector current of 2 amperes and a collector emitter voltage of up to 100 volts, this device suits various power amplification needs in electronic circuits.
The transistor is housed in a TO-252 package with 3 pins optimized for surface mounting, facilitating compact PCB layouts. It exhibits a minimum DC current gain (hFE) of 1000, ensuring efficient transistor operation in signal amplification scenarios.
With a maximum power dissipation of 20 watts, this transistor offers robust thermal handling capabilities, supported by an operating temperature range spanning from -65°C to 150°C. The device's PNP polarity allows it to be used in specific switching and amplification applications needing such configuration.
onsemi MJD117T4G meets the automotive industry standard AEC-Q101, certifying its reliability for automotive and industrial uses. Its compact dimensions - 2.38 mm in height and 6.73 mm in length - make it suitable for tight electronic assemblies.
This transistor is ideal for industrial, automotive, power management, and amplification circuits, where dependable high gain and power handling are critical. Its surface mount design simplifies integration in modern PCB assemblies.
Maximum continuous collector current of 2 amperes. Maximum collector emitter voltage rated at 100 volts. Minimum DC current gain hFE of 1000. Maximum power dissipation of 20 watts. PNP transistor polarity. 3-pin TO-252 surface mount package.
Operating temperature range from -65°C to 150°C. Compliant with AEC-Q101 automotive standard. Compact size: 2.38 mm height, 6.73 mm length. Explore more Darlington Transistors and discrete semiconductor solutions in the Electronics & Electricals category on EnvMart.
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