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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 500 V, 14 A, Enhancement Mode, TO-220 Package STP14NK50ZFP

Category Semiconductors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.3mm
Length 10.4mm
Model STP14NK50ZFP
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 14A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 380mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 69nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • Maximum continuous drain current of 14A ensures robust conduction capability.
  • Maximum drain-source voltage rating of 500V supports high voltage operations.
  • Low drain-source resistance (Rds) of 380mΩ reduces conduction losses.
  • Enhancement mode channel type for improved switching efficiency.
  • Maximum power dissipation of 35W enables handling of significant thermal loads.
  • Maximum gate-source voltage of ±30V enhances gate control flexibility.
  • Forward voltage of 1.6V contributes to efficient device operation.
  • Wide operating temperature range from -55°C to 150°C for reliable performance.

Product Description

STMicroelectronics STP14NK50ZFP MDmesh SuperMESH N-Channel MOSFET is a high-performance power transistor housed in a 3-Pin TO-220 package, designed for reliable switching in industrial and electronic applications.

This MOSFET is rated for a maximum continuous drain current of 14A and can withstand a maximum drain-source voltage of 500V, making it suitable for high voltage power circuits. The device operates in enhancement mode and features a low maximum drain-source resistance (Rds) of 380mΩ, enabling low conduction losses and efficient power management.

With a maximum power dissipation of 35W, it supports demanding thermal conditions. The maximum gate-source voltage rating of ±30V allows for flexible gate control, and a forward voltage of 1.6V assists in efficient operation.

This MOSFET supports a wide operating temperature range from -55°C to 150°C, ensuring durability in harsh environments. The compact TO-220 package size with dimensions of length 10.4mm, width 4.6mm, and height 9.3mm provides easy integration into through-hole mount designs.

Maximum continuous drain current of 14A. Maximum drain-source voltage of 500V. Low drain-source resistance of 380mΩ for efficient conduction. Enhancement mode operation for improved switching performance. Power dissipation of 35W supports heavy loads.

Gate-source voltage tolerance of ±30V. Forward voltage of 1.6V. Operating temperature range -55°C to 150°C. Compact TO-220 package with 3 pins.

This MOSFET is suited for various applications including power supplies, motor control, industrial electronics, and other power management systems requiring reliable and efficient switching components.

Explore more power semiconductor components by STMicroelectronics and other leading brands on EnvMart.

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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 500 V, 14 A, Enhancement Mode, TO-220 Package STP14NK50ZFP
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Frequently Asked Questions

The maximum continuous drain current of this model is 14A, ensuring robust conduction capability.

It has a maximum drain-source voltage rating of 500V, making it suitable for high voltage operations.

The low maximum drain-source resistance (Rds) is 380mΩ, which reduces conduction losses.

It can handle a maximum power dissipation of 35W, enabling it to manage significant thermal loads.

This model operates within a wide temperature range from -55°C to 150°C, ensuring reliable performance in various conditions.

It is housed in a compact TO-220 package, which is suitable for through-hole mounting.

The maximum gate-source voltage rating is ±30V, providing enhanced gate control flexibility.

The forward voltage is 1.6V, which contributes to efficient device operation.

The typical gate charge (Qg) at Vgs is 69nC, which is relevant for switching applications.

This model uses an N-channel type, which is common for enhancement mode operation.

It is suitable for various applications including power supplies, motor control, and industrial electronics requiring reliable switching.

The dimensions of the TO-220 package are 10.4mm in length, 4.6mm in width, and 9.3mm in height.

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