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STMicroelectronics Schottky Barrier Diode 60 V 1 A Surface Mount MELF Package TMBYV10-60FILM

Category Semiconductors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Diameter 2.5mm
Brand STMicroelectronics
Height 2.65mm
Length 5.2mm
Model TMBYV10-60FILM
Width 2.65mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type MELF
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 60V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 500μA
Peak Non-Repetitive Forward Surge Current Ifsm 40A
Maximum Forward Voltage Vf 1V

Key Features

  • This diode features a MELF package type optimized for surface mounting.
  • It offers a peak reverse repetitive voltage of 60 V and a maximum forward voltage of 1 V.
  • The device supports a peak non-repetitive forward surge current of up to 40 A.
  • Operating temperature ranges from -65°C to 125°C, suitable for harsh environments.
  • Compact physical dimensions include a length of 5.2 mm, width and height of 2.65 mm, and a diameter of 2.5 mm.
  • Designed for industrial and electronic component applications requiring efficient rectification and switching.
  • The diode arrangement is single with a 2-pin configuration ensuring easy PCB integration.

Product Description

STMicroelectronics TMBYV10-60FILM is a high-performance 60 V 1 A Schottky Barrier Diode ideal for power-sensitive and high-frequency applications. Encased in a MELF surface mount package, it delivers efficient rectification with low forward voltage drop, reducing power losses.

The diode supports a maximum continuous forward current of 1 A and a peak reverse repetitive voltage of 60 V. With its capability to handle surge currents up to 40 A, it is reliable for transient load conditions. The temperature tolerance from -65°C to 125°C makes it suitable for demanding industrial and electronic environments.

This 2-pin single diode is designed with compact dimensions (5.2 mm length, 2.65 mm width and height, 2.5 mm diameter) facilitating integration into dense PCB layouts. It does not carry automotive or environmental standards approvals, focusing on robust electrical performance.

Schottky diodes like this model are widely used in rectifier circuits, power management, voltage clamping, and switching power supplies in industrial, electronic component manufacturing, and research laboratory setups.

This diode's surface mount MELF package enhances thermal performance and mechanical strength. Low forward voltage drop optimizes energy efficiency in power circuits. Robust surge current handling capability ensures operational reliability.

Wide operating temperature range suits harsh environmental conditions. Compact size allows high-density PCB designs. Single diode configuration simplifies circuit design and assembly. Ideal for use in power electronics, switching power supplies, and voltage regulation modules.

This product is a trusted component for engineers and manufacturers requiring reliable Schottky diode performance. Browse the Electronics & Electricals category at EnvMart for more semiconductor solutions by STMicroelectronics and other leading brands.

Explore more products in our Semiconductors category.

STMicroelectronics Schottky Barrier Diode 60 V 1 A Surface Mount MELF Package TMBYV10-60FILM
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Frequently Asked Questions

The peak reverse repetitive voltage of this diode is 60 V.

It has a maximum continuous forward current rating of 1 A.

The MELF package has a length of 5.2 mm, a width of 2.65 mm, a height of 2.65 mm, and a diameter of 2.5 mm.

The operating temperature range is from -65°C to 125°C.

The diode supports a peak non-repetitive forward surge current of up to 40 A.

This model features a 2-pin configuration.

This diode is a Schottky rectifier type, which is known for its low forward voltage drop.

The maximum forward voltage drop is 1 V.

It is suitable for power management, voltage clamping, and switching power supplies in industrial and electronic component manufacturing applications.

The peak reverse current is rated at 500 μA.

The MELF package type enhances thermal performance and mechanical strength, making it suitable for high-density PCB layouts.

The country of origin for this diode is India.

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