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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 28.9mm |
| Length | 10.4mm |
| Model | BUL128D-B |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 700V |
| Maximum Power Dissipation Pd | 70W |
| Maximum DC Collector Current Idc | 4A |
| Transistor Configuration | Single |
STMicroelectronics BUL128D-B is a high voltage NPN bipolar transistor engineered for industrial and electronic power applications requiring robust performance at currents up to 4 A and voltage ratings up to 400 V.
This transistor features a 3-pin TO-220 package allowing easy mounting on circuit boards with effective heat dissipation. It supports a maximum power dissipation of 70 W, making it suitable for medium power switching and amplification tasks.
Its wide operating temperature range from 0°C to 150°C ensures reliable function across various industrial, manufacturing, and electronic environments. The device's high collector-base voltage of 700 V provides substantial voltage isolation, enhancing device safety.
The BUL128D-B transistor has a minimum current gain (hFE) of 10, making it consistent and reliable in circuit amplification applications. It does not carry automotive standards, positioning it for general electronic and industrial use.
Physical specifications include a height of 28.9 mm, width of 4.6 mm, and length of 10.4 mm, providing a compact footprint. Its through-hole mount type facilitates secure mechanical and electrical connections.
Maximum collector current of 4 A. Maximum collector-emitter voltage of 400 V. Power dissipation up to 70 W. NPN transistor type in TO-220 package with 3 pins. Operating temperature range 0°C to 150°C. Minimum DC current gain of 10.
Maximum collector-base voltage of 700 V. Through-hole mounting configuration. Compact package dimensions: 28.9 mm height, 4.6 mm width, 10.4 mm length.
This transistor is widely applicable for electronic component assembly, power supply circuits, industrial equipment, and general semiconductor applications requiring high voltage and current capabilities.
Explore more high-quality Bipolar Transistors and electronic components from leading manufacturers within the EnvMart platform.
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