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STMicroelectronics High Voltage NPN Transistor, 4 A Collector Current, 400 V Collector Emitter Voltage, 70 W Power BUL128D-B

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 28.9mm
Length 10.4mm
Model BUL128D-B
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 9V
Maximum Collector Base Voltage VCBO 700V
Maximum Power Dissipation Pd 70W
Maximum DC Collector Current Idc 4A
Transistor Configuration Single

Key Features

  • Maximum collector current of 4 amperes supports high power circuits.
  • Collector-emitter voltage rating is 400 volts for high voltage applications.
  • Power dissipation up to 70 watts allows reliable thermal management.
  • 3-pin TO-220 through-hole package for easy mounting and heat sinking.
  • Wide operating temperature range from 0°C to 150°C for industrial environments.
  • NPN configuration suitable for switching and amplification purposes.
  • Maximum collector-base voltage of 700 volts ensures robust voltage isolation.
  • Minimum DC current gain of 10 for performance stability.

Product Description

STMicroelectronics BUL128D-B is a high voltage NPN bipolar transistor engineered for industrial and electronic power applications requiring robust performance at currents up to 4 A and voltage ratings up to 400 V.

This transistor features a 3-pin TO-220 package allowing easy mounting on circuit boards with effective heat dissipation. It supports a maximum power dissipation of 70 W, making it suitable for medium power switching and amplification tasks.

Its wide operating temperature range from 0°C to 150°C ensures reliable function across various industrial, manufacturing, and electronic environments. The device's high collector-base voltage of 700 V provides substantial voltage isolation, enhancing device safety.

The BUL128D-B transistor has a minimum current gain (hFE) of 10, making it consistent and reliable in circuit amplification applications. It does not carry automotive standards, positioning it for general electronic and industrial use.

Physical specifications include a height of 28.9 mm, width of 4.6 mm, and length of 10.4 mm, providing a compact footprint. Its through-hole mount type facilitates secure mechanical and electrical connections.

Maximum collector current of 4 A. Maximum collector-emitter voltage of 400 V. Power dissipation up to 70 W. NPN transistor type in TO-220 package with 3 pins. Operating temperature range 0°C to 150°C. Minimum DC current gain of 10.

Maximum collector-base voltage of 700 V. Through-hole mounting configuration. Compact package dimensions: 28.9 mm height, 4.6 mm width, 10.4 mm length.

This transistor is widely applicable for electronic component assembly, power supply circuits, industrial equipment, and general semiconductor applications requiring high voltage and current capabilities.

Explore more high-quality Bipolar Transistors and electronic components from leading manufacturers within the EnvMart platform.

STMicroelectronics High Voltage NPN Transistor, 4 A Collector Current, 400 V Collector Emitter Voltage, 70 W Power BUL128D-B
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Frequently Asked Questions

The maximum collector current for this model is 4 A, making it suitable for high power circuits.

The collector-emitter voltage rating is 400 V, which supports high voltage applications.

It can dissipate up to 70 W, allowing for reliable thermal management in various applications.

The BUL128D-B comes in a 3-pin TO-220 package, facilitating easy mounting and heat sinking.

It operates within a temperature range of 0°C to 150°C, suitable for industrial environments.

The minimum DC current gain (hFE) is 10, ensuring performance stability in amplification applications.

The maximum collector-base voltage is 700 V, providing substantial voltage isolation.

The dimensions are 28.9 mm in height, 4.6 mm in width, and 10.4 mm in length.

It supports a through-hole mounting configuration for secure mechanical and electrical connections.

This transistor is applicable in electronic component assembly, power supply circuits, and general semiconductor applications requiring high voltage and current capabilities.

It features a single NPN configuration, suitable for both switching and amplification purposes.

The country of origin for this model is India.

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