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Nexperia Low Leakage Diode 85 V 215 mA 3-Pin SOT-23 BAS116,215

Category Schottky Diodes & Rectifiers Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BAS116,215
Width 1.4mm
Mount Type Surface
Series BAS116
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 215mA
Peak Reverse Repetitive Voltage Vrrm 85V
Diode Configuration Single
Rectifier Type Low Leakage
Peak Reverse Current Ir 5nA
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 3μs
onsemi 75 V 200 mA Diode Low Leakage 3-Pin SOT-23 BAS116LT1GBrand onsemi
NXP 85V 215mA, Silicon Junction Diode, 3-Pin SOT-23 BAS116Brand NXP

Key Features

  • This diode has a maximum continuous forward current of 215 mA.
  • Maximum peak reverse repetitive voltage is 85 V supporting reliable switching performance.
  • Low leakage design ensures minimal current loss at operating conditions.
  • It features a peak non-repetitive forward surge current of 4 A for transient handling.
  • Maximum forward voltage drop is 1.25 V supporting efficient diode operation.
  • The device operates over temperature range from -65°C to 150°C.
  • Peak reverse current is low at 5 nA ensuring high insulation resistance.
  • Small signal switching diode configuration with a fast peak reverse recovery time of 3 µs.

Product Description

Nexperia BAS116,215 is a low leakage diode designed for surface mount applications in high-density circuits. It is housed in a compact 3-pin SOT-23 package measuring 3 mm by 1.4 mm by 1 mm, facilitating miniaturization of electronic assemblies.

This diode supports a continuous forward current of 215 mA and peak reverse repetitive voltage of 85 V. Its low leakage characteristic improves efficiency by minimizing current losses under reverse bias conditions. The diode delivers reliable high-speed switching with a peak reverse recovery time of 3 microseconds.

Additional electrical features include a maximum forward voltage drop of 1.25 V and the ability to withstand a peak non-repetitive surge current of 4 A, making it resilient to transient overloads. The diode maintains operational integrity within a temperature range of -65°C to 150°C, suitable for automotive and industrial environments.

This device meets the rigorous AEC-Q101 automotive standard, ensuring suitability for demanding automotive electronics systems requiring high reliability and quality.

These technical characteristics make the Nexperia BAS116,215 diode ideal for applications such as power management, signal rectification, and protection circuits in electronic control units, communication devices, and other semiconductor modules used in industrial, automotive, and commercial electronics.

Maximum continuous forward current: 215 mA. Peak reverse repetitive voltage: 85 V. Low leakage and high voltage for efficient switching. Peak non-repetitive forward surge current: 4 A. Forward voltage drop max: 1.25 V. Operational temperature range: -65°C to 150°C.

Peak reverse current: 5 nA. Fast recovery time: 3 µs. Small dimensions and 3-pin SOT-23 package. AEC-Q101 automotive standard compliant. Explore more semiconductor diodes and components in the Electronics & Electricals category at EnvMart for reliable, industry-grade solutions.

Explore more products in our Schottky Diodes & Rectifiers category.

Nexperia Low Leakage Diode 85 V 215 mA 3-Pin SOT-23 BAS116,215
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Frequently Asked Questions

The maximum continuous forward current for this diode is 215 mA.

It supports a peak reverse repetitive voltage of 85 V.

The maximum forward voltage drop is 1.25 V.

The diode can withstand a peak non-repetitive forward surge current of 4 A.

It operates within a temperature range of -65°C to 150°C.

The peak reverse current is low at 5 nA.

This diode is housed in a 3-pin SOT-23 package with dimensions of 3 mm by 1.4 mm by 1 mm.

It complies with the AEC-Q101 automotive standard.

The peak reverse recovery time is 3 µs.

It features a single diode configuration.

This model is designed for surface mount applications.

It is suitable for applications such as power management, signal rectification, and protection circuits in electronic control units and communication devices.

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