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onsemi Small Signal NPN Bipolar Transistor, 500 mA DC Collector Current, 80 V Collector Emitter Voltage, 3-Pin MMBTA06LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBTA06LT1G
Width 1.4mm
Mount Type Surface
Series MMBTA06L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 4V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi MMBTA06 NPN Bipolar Transistor, 500 mA, 80 V, 3-Pin SOT-23Brand ON Semiconductor

Key Features

  • The transistor supports a maximum power dissipation of 300 mW.
  • It is surface mount type, designed for compact electronic component applications.
  • Offers a minimum DC current gain (hFE) of 100 ensuring signal amplification efficiency.
  • Operating temperature range from -55°C to 150°C suits industrial and automotive environments.
  • Complies with automotive standard AEC-Q101 for reliability and quality assurance.
  • Maximum transition frequency is 100 MHz, suitable for high-frequency switching applications.

Product Description

onsemi MMBTA06LT1G is a small signal NPN bipolar transistor designed for a variety of electronic applications including signal amplification and switching within industrial and automotive sectors. It operates with a maximum DC collector current of 500 mA and can handle a collector emitter voltage of up to 80 V, making it suitable for robust circuit designs requiring moderate current and voltage handling capacity.

The transistor features a 3-pin SOT-23 package suitable for surface mounting on compact printed circuit boards where space constraints are critical. Its power dissipation rating of 300 mW ensures stable operation under typical load conditions.

Designed to withstand operating temperatures from -55°C to 150°C, the MMBTA06LT1G complies with the automotive standard AEC-Q101 which guarantees durability and reliability in automotive electronics environments.

This device offers a minimum DC current gain of 100, providing efficient signal amplification. It also supports a maximum transition frequency of 100 MHz, enabling applications in high-frequency switching circuits.

Mechanical dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height allow for versatile integration into various electronic designs.

Its small size, thermal performance, and compliance with automotive standards make the onsemi MMBTA06LT1G a reliable choice for automotive, industrial control, consumer electronics, and other demanding electronic circuit applications.

The transistor has a maximum DC collector current of 500 mA. It allows a maximum collector emitter voltage of 80 V. Comes in a compact 3-pin SOT-23 surface mount package. Supports a power dissipation rating of 300 mW. Has a minimum DC current gain of 100 for effective amplification.

Operates within a temperature range of -55°C to 150°C. Meets automotive standard AEC-Q101 for quality assurance. Mechanical dimensions are length 3.04 mm, width 1.4 mm, height 1.11 mm. Maximum transition frequency of 100 MHz for high-frequency applications.

Suitable for industrial, automotive, consumer electronics, and manufacturing applications requiring a reliable small signal transistor. Explore more semiconductor components and Bipolar Transistors on EnvMart for comprehensive electronics solutions.

onsemi Small Signal NPN Bipolar Transistor, 500 mA DC Collector Current, 80 V Collector Emitter Voltage, 3-Pin MMBTA06LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

It can handle a maximum collector emitter voltage of 80 V.

The transistor supports a maximum power dissipation of 300 mW.

It operates within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 100, ensuring effective signal amplification.

The mechanical dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

It comes in a compact 3-pin SOT-23 surface mount package.

It complies with the automotive standard AEC-Q101 for reliability and quality assurance.

The maximum transition frequency is 100 MHz, suitable for high-frequency applications.

It is an NPN bipolar transistor, designed for signal amplification and switching.

The maximum emitter base voltage (VEBO) is 4 V.

This transistor is suitable for automotive, industrial control, and consumer electronics applications.

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