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onsemi Small Signal NPN Transistor 3-Pin SOT-23 600mA 160V 300mW MMBT5551LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT5551LT1G
Width 1.4mm
Mount Type Surface
Series MMBT5551
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Nexperia Transistor, 300 mA NPN, 160 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • The transistor supports a maximum power dissipation of 300 mW.
  • It features a minimum DC current gain of 20, ensuring reliable amplification.
  • Designed with surface mount technology for efficient PCB integration.
  • Operates reliably within a temperature range from -55°C to 150°C.
  • Complies with AEC-Q101 automotive standard, suitable for automotive and industrial applications.
  • Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height enable space-efficient designs.
  • Single configuration NPN transistor optimized for small signal switching and amplification.

Product Description

onsemi MMBT5551LT1G is a small signal NPN transistor widely used in electronic circuits requiring reliable switching and amplification capabilities. It supports a maximum collector current of 600 mA and maximum collector-emitter voltage of 160 V, making it suitable for a variety of industrial, automotive, and commercial applications.

The transistor is packaged in a 3-pin SOT-23 surface-mount package, facilitating compact and automated PCB assembly. It features a maximum power dissipation rating of 300 mW and a minimum DC current gain (hFE) of 20, which ensures dependable performance in amplification tasks.

Operating temperature ranges from -55°C to 150°C, allowing this transistor to function in harsh environmental conditions including automotive and industrial settings. It also meets the automotive-qualified AEC-Q101 standard, reinforcing its suitability for critical automotive electronics systems.

The MMBT5551LT1G transistor is dimensioned at 3.04 mm length, 1.4 mm width, and 1.11 mm height, enabling design flexibility in space-constrained applications. It features transistor polarity NPN and single transistor configuration, providing versatility in discrete transistor circuit designs.

The transistor supports a maximum collector-base voltage of 180 V and maximum emitter-base voltage of 6 V. It is specifically designed for surface mount technology with 3 pin count. Suitable for use in industrial control, automotive electronics, power management, and signal processing circuits.

Provides reliable small signal amplification and switching functions. Compact device size ensures easy integration in modern electronic assemblies. It is ideal for designers and engineers seeking dependable performance in small signal transistor applications.

Explore the full range of Bipolar Transistors and related components at EnvMart for all your electronic and electrical engineering needs.

onsemi Small Signal NPN Transistor 3-Pin SOT-23 600mA 160V 300mW MMBT5551LT1G
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Frequently Asked Questions

The maximum collector current for this transistor is 600 mA.

It has a maximum power dissipation rating of 300 mW.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

It operates reliably within a temperature range from -55°C to 150°C.

This transistor is packaged in a 3-pin SOT-23 surface-mount package.

The minimum DC current gain (hFE) is 20.

It complies with the AEC-Q101 automotive standard.

The maximum collector-emitter voltage is 160 V.

It features a single transistor configuration.

The maximum collector-base voltage is 180 V.

It is suitable for industrial control, automotive electronics, power management, and signal processing circuits.

The maximum emitter-base voltage is 6 V.

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