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onsemi Darlington Transistor NPN, 3 A, 100 V, HFE: 750, 3-Pin TO-220 BDX33CG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.28mm |
| Length | 10.28mm |
| Model | BDX33CG |
| Mount Type | Through Hole |
| Series | BDX33C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 3A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 1mA |
| BDX33C, Darlington Transistor, NPN 10A 100V HFE | 750, 3-Pin, TO-220Brand: ON Semiconductor |
| onsemi BDX33CG 1 Darlington Transistor NPN, 3 A 100 V HFE | 750, 3-Pin TO-220 |
Key Features
- This transistor supports a maximum collector emitter voltage of 100 V.
- It offers a minimum DC current gain (hFE) of 750.
- The package type is TO-220 with through-hole mounting.
- Designed to operate between -65°C and 150°C ambient temperature.
- The transistor polarity is NPN, suitable for various power amplification applications.
- It has 3 pins for easy PCB integration.
- Maximum collector emitter saturation voltage is 2.5 V.
- Maximum emitter base voltage is 5 V ensuring reliable switching.
Product Description
onsemi BDX33CG is an NPN Darlington transistor engineered for power amplification and switching applications. It supports a maximum continuous collector current of 3 A and a collector emitter voltage of 100 V, housed in a durable 3-pin TO-220 package designed for through-hole mounting.
This transistor features a minimum DC current gain (hFE) of 750, which allows for efficient signal amplification with minimal input current. The device operates reliably across a wide temperature range from -65°C to 150°C, making it suitable for industrial and electronic applications requiring temperature resilience.
Key electrical parameters include a maximum collector emitter saturation voltage (VceSAT) of 2.5 V and a maximum emitter base voltage (VEBO) of 5 V, ensuring performance stability in switching roles. Its NPN polarity transistor design is widely used in power control circuits, motor drivers, and amplification systems.
The compact dimensions of 10.28 mm length and 9.28 mm height allow for efficient space utilization in PCB layouts. As a single-element chip, it embodies high reliability for embedded electronics and automotive electronics contexts, although it is not automotive qualified per AEC-Q101 standard.
Maximum collector current: 3 A enables adequate current handling for medium-power applications. Voltage rating of 100 V ensures safety margin in many power circuits. High current gain supports effective Darlington transistor operation.
TO-220 package facilitates heat dissipation and easy mounting in electronic assemblies. Wide operating temperature range suits demanding industrial environments. 3-pin configuration is standard for transistor operation and PCB integration.
Applications include power management, amplifier circuits, and switching devices in electronics and industrial systems.
This product is categorized under discrete semiconductors for versatile use in electronic components manufacturing and power control systems. Explore more products in Darlington Transistors on EnvMart to suit your electronic design and industrial needs.
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Frequently Asked Questions
The maximum collector emitter voltage for this transistor is 100 V.
The minimum DC current gain (hFE) of the BDX33CG is 750.
It can handle a maximum continuous collector current of 3 A.
This transistor operates reliably between -65°C and 150°C.
The TO-220 package supports through-hole mounting.
It has 3 pins for easy PCB integration.
The maximum collector emitter saturation voltage (VceSAT) is 2.5 V.
The maximum emitter base voltage (VEBO) is 5 V.
The height of this transistor is 9.28 mm and the length is 10.28 mm.
The transistor polarity of the BDX33CG is NPN.
It is suitable for power management, amplifier circuits, and switching devices in electronics and industrial systems.
The BDX33CG is manufactured in India.
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