Nexperia Bipolar Transistor PNP, Maximum Collector Current -100 mA, Maximum Collector Emitter Voltage -45 V, 3-Pin BC857AQCZ

The Nexperia BC857AQCZ bipolar transistor is a high-performance PNP transistor housed in an ultra small DFN1110D-3 (SOT8015) leadless surface-mounted device plastic package with side-wettable flanks.

This transistor offers a maximum DC collector current of -100 mA and withstands a collector emitter voltage up to -45 V, making it suitable for low power switching and amplification tasks.

The component features a small footprint and low package height of just 0.5 mm which is ideal for compact PCB designs requiring surface mount technology (SMT).

Its high power dissipation capacity ensures dependable operation in demanding industrial and automotive environments. The device is qualified to AEC-Q101 automotive standard, ensuring robust performance under harsh conditions.

The device's operating temperature range spans from -55°C to 150°C and includes RoHS compliance for environmental safety. Ultra small DFN1110D-3 (SOT8015) surface-mount plastic package with side-wettable flanks. High power dissipation capacity for enhanced reliability.

Supports automated optical inspection for quality assurance. Compact size with 0.5 mm package height facilitates dense PCB layouts. AEC-Q101 qualification supports automotive-grade applications. Wide operating temperature capability from -55°C to 150°C.

Maximum voltages: Collector-Emitter -45 V, Collector-Base -50 V, Emitter-Base -6 V. PNP transistor configuration suitable for general amplification and switching. Pin count of 3 for easy integration. RoHS compliant ensuring environmentally friendly manufacturing.

This transistor is widely used in electronic components sectors including consumer electronics, automotive, industrial automation, and telecommunications. Available in bulk packaging optimizing production workflow for manufacturers.

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