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Vishay N-Channel MOSFET 11 A, 600 V Enhancement 3-Pin TO-247 IRFPC50APBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFPC50APBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFPC50A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 580mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 180W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
| N-channel MOSFET,IRFPC50A 11A 600VBrand | Vishay |
Key Features
- The MOSFET supports a maximum continuous drain current of 11 amperes.
- It features a maximum drain-source voltage of 600 volts for high voltage operation.
- The device comes in a 3-pin TO-247 package suitable for through-hole mounting.
- Maximum power dissipation rating of 180 watts ensures reliable performance under high load.
- Operating temperature range spans from -55°C to 150°C, making it suitable for harsh industrial environments.
- Gate charge is typically 70 nC at a gate-source voltage of 10 V.
- Maximum gate-source voltage is ±30 volts for robust gate control.
- Low drain-source resistance of 580 milliohms reduces conduction losses.
Product Description
Vishay IRFPC50APBF is a reliable N-Channel MOSFET transistor engineered for power management in industrial and electronic applications. Its enhancement mode operation facilitates efficient switching and amplification with a maximum continuous drain current rating of 11 amps and drain-source voltage rating of 600 volts.
The device is housed in a robust TO-247 package with through-hole mounting for secure installation. Its power dissipation capacity of 180 watts allows it to handle demanding electrical loads without performance degradation.
Designed to operate between temperatures of -55°C and 150°C, this MOSFET performs well in automotive, manufacturing, and industrial environments with wide temperature fluctuations.
The typical gate charge of 70 nC at 10V gate voltage and gate-source voltage limit of ±30 volts provide effective switching characteristics while maintaining protection against voltage spikes.
The IRFPC50APBF offers low on-resistance (580 milliohms), which contributes to reduced power losses and enhanced energy efficiency in circuits. The forward voltage of 1.4V supports optimized conduction.
With compact dimensions measuring 15.87 mm length, 5.31 mm width, and 20.7 mm height, this component is suitable for space-constrained electronic assemblies. The MOSFET supports a maximum continuous drain current of 11 amperes.
Features a maximum drain-source voltage of 600 volts. Compatible with TO-247 3-pin through-hole mount packaging. Rated for power dissipation up to 180 watts. Operating temperature range from -55°C to 150°C. Typical gate charge of 70 nC at 10 V Vgs.
Maximum gate-source voltage ±30 volts. Low on resistance of 580 milliohms. Forward voltage drop of 1.4 volts. Compact size ideal for industrial applications.
This N-Channel MOSFET is widely used in power management circuits in electronics, industrial machinery, HVAC systems, automotive electronics, and automation control. Its reliable performance and robust ratings make it an essential component in discrete semiconductor selections.
Explore Vishay brand modules and similar power Semiconductor devices at EnvMart for your electronic manufacturing and design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes.
This MOSFET features a maximum drain-source voltage rating of 600 volts.
It has a maximum power dissipation rating of 180 watts, allowing it to handle demanding electrical loads.
The operating temperature range spans from -55°C to 150°C, making it suitable for harsh environments.
The typical gate charge is 70 nC at a gate-source voltage of 10 V.
The maximum gate-source voltage is ±30 volts, providing robust gate control.
It has a low drain-source resistance of 580 milliohms, which helps reduce conduction losses.
The dimensions of the TO-247 package are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
This model is designed for through-hole mounting, suitable for secure installation.
It is widely used in power management circuits in electronics, industrial machinery, HVAC systems, automotive electronics, and automation control.
The forward voltage drop is 1.4 volts, which supports optimized conduction.
This MOSFET has a pin count of 3, corresponding to its TO-247 package design.
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