ROHM IGBT 40 A 600 V 3-Pin TO-247GE Through Hole Semiconductor RGCL80TS60GC13

ROHM RGCL80TS60GC13 is a high-performance IGBT (Insulated Gate Bipolar Transistor) with a maximum continuous collector current of 40 A and maximum collector emitter voltage of 600 V. It uses a TO-247GE package with through hole mounting and features 3 pins for electrical connections. This device supports a wide operating temperature range from -40°C to 175°C, making it suitable for demanding industrial and power electronic applications.

This IGBT is a Field Stop Trench type offering a low collector emitter saturation voltage of 1.4 V, which contributes to energy savings and enhanced efficiency in power conversion and switching applications. Its maximum power dissipation rating is 148 W, providing excellent thermal management capabilities.

The maximum gate emitter voltage rating of ±30 V ensures safe and reliable device operation under high-voltage switching conditions. The product is RoHS compliant with lead-free plating, supporting environmentally friendly manufacturing and disposal.

The RGCL80TS60GC13 model finds use in power supplies, motor drives, inverters, and other high voltage and high current semiconductor applications in industries including manufacturing, automotive electronics, renewable energy systems, and industrial automation.

Its robust construction and through-hole mounting style facilitate easy integration into power electronic circuits requiring high performance and reliability. The compact TO-247GE package supports efficient heat dissipation and mechanical stability.

Maximum continuous collector current: 40 A. Maximum collector emitter voltage: 600 V. Maximum power dissipation: 148 W. Package: TO-247GE. Mount type: Through Hole. Pin count: 3. Maximum gate emitter voltage: ±30 V. Maximum collector emitter saturation voltage: 1.4 V.

Operating temperature range: -40°C to 175°C. RoHS compliant and lead-free. Explore more semiconductors and IGBTs at EnvMart for reliable industrial and electronic components.