Nexperia Low Saturation Voltage NPN Transistor 5 A 40 V 4-Pin SOT-223 PBSS4540Z,115

Nexperia PBSS4540Z,115 Low Saturation Voltage NPN Transistor is designed for high-efficiency switching and digital applications. It features a low collector-emitter saturation voltage, which reduces power loss and heat generation, making it suitable for compact power electronics and signal amplification circuits.

This transistor supports a maximum DC collector current of 5 A and a maximum collector-emitter voltage of 40 V, allowing it to handle moderate power loads. The device is housed in a 4-pin SOT-223 package that ensures efficient surface mounting and space-saving implementation in PCB designs.

Operating reliably across a wide temperature range from -65°C to 150°C, the transistor provides stable performance in harsh industrial, automotive, and electronic environments. Its minimum DC current gain (hFE) of 100 and maximum transition frequency of 130 MHz make it ideal for fast switching applications and signal processing.

Nexperia has built this transistor in compliance with RoHS regulations and automotive standard AEC-Q101, ensuring environmental safety and automotive-grade reliability. The transistor's dimensions of 6.7 mm length, 7.3 mm width, and 1.65 mm height facilitate compact circuit configurations without compromising performance.

This transistor is especially suited for use in industrial automation, automotive electronics, consumer electronics, and other applications where reduced power dissipation and efficient switching are critical. The component is manufactured in China, maintaining consistent quality control and supply standards.

Features low collector-emitter saturation voltage for efficient switching performance. Supports maximum DC collector current of 5 A ensuring high current capacity. Compact 4-pin SOT-223 surface mount package suitable for space-saving designs.

Operating temperature range from -65°C to 150°C for reliability in varied conditions. Maximum power dissipation of 2 W with a minimum DC current gain (hFE) of 100. Designed with a transition frequency of 130 MHz enabling high-speed switching applications.

Compliant with RoHS standards and qualified to AEC-Q101 automotive reliability standards. Dimensioned at 6.7 mm length, 7.3 mm width, and 1.65 mm height ensuring compact footprint. Ideal for switching and digital applications requiring low power loss and heat generation.

Manufactured in China ensuring consistent quality through established production processes. Browse the Bipolar Transistors category on EnvMart for more high-quality semiconductor components from Nexperia and other leading manufacturers.