STMicroelectronics NPN Transistor 5 A, 60 V, 4-Pin SOT-223 STN851

STMicroelectronics STN851 NPN Transistor is a highly reliable bipolar transistor designed for general-purpose applications requiring up to 5 A collector current and 60 V collector-emitter voltage. Encapsulated in a surface-mount 4-pin SOT-223 package, this device delivers efficient power management with a maximum power dissipation of 1.6 W.

This transistor features a minimum DC current gain (hFE) of 8, providing adequate current amplification for switching and amplification tasks in electronic circuits. Its maximum transition frequency (ft) of 130 MHz ensures sound operation in high-frequency environments.

The compact package dimensions of 6.7 mm length, 7.3 mm width, and 1.8 mm height allow for space-saving PCB layouts. It operates reliably over an ambient temperature range of 0°C to 150°C, making it suitable for various industrial, electronic, and power management applications.

The STN851 transistor supports maximum collector-base voltage of 150 V and emitter-base voltage of 7 V for stable operations under demanding conditions. Although it does not meet automotive standards, it is ideal for use in power electronics, industrial control systems, and consumer electronics requiring robust switching components.

This transistor offers a maximum power dissipation of 1.6 W suitable for general purpose applications. It has a minimum DC current gain (hFE) of 8 ensuring reliable current amplification. Designed for surface mount with a compact SOT-223 package with dimensions of 6.7 mm length, 7.3 mm width, and 1.8 mm height.

Operates across a temperature range from 0°C to 150°C, suitable for diverse industrial environments. Features a maximum transition frequency (ft) of 130 MHz enhancing high frequency switching performance. The transistor configuration is single with 4 pins and NPN polarity for standard bipolar operation.

Maximum collector-base voltage rating is 150 V, supporting robust circuit designs. Maximum emitter-base voltage is 7 V, safeguarding device longevity under operating conditions. Designed without automotive standards compliance but optimized for general semiconductor applications.

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