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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 29.75mm |
| Length | 10.4mm |
| Model | BUL138 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 8 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 800V |
| Maximum Power Dissipation Pd | 80W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
STMicroelectronics BUL138 is a high voltage NPN bipolar transistor designed for power and industrial electronic applications. It features a maximum DC collector current of 5 amperes and is rated for collector-emitter voltages up to 400 volts, making it suitable for circuits requiring robust switching and amplification capabilities.
The transistor is housed in a 3-pin TO-220 package designed for through-hole mounting, providing easy integration into PCB designs. It offers a maximum power dissipation of 80 watts, allowing reliable operation under demanding conditions.
The device exhibits a minimum DC current gain (hFE) of 8 and operates up to 150°C, ensuring stable performance in high-temperature environments typical of industrial, power supply, and control systems.
Package dimensions of length 10.4 mm, width 4.6 mm, and height 29.75 mm comply with standard TO-220 outlines, compatible with various mounting options and thermal management techniques. Its transistor configuration is single NPN polarity, with maximum collector-base voltage of 800 volts and maximum emitter-base voltage of 9 volts, enhancing its versatility in electronic circuit designs.
This transistor is ideal for use in applications including power amplifiers, switching regulators, motor drivers, and other industrial electronic circuits demanding high voltage and current capabilities.
Maximum DC collector current of 5 amperes ensures robust power handling. Collector-emitter voltage rating up to 400 volts supports high voltage circuits. Maximum power dissipation is rated at 80 watts for heavy-duty use.
Featuring a minimum DC current gain (hFE) of 8 for effective amplification. Operates reliably up to a maximum temperature of 150°C. Single transistor configuration designed for NPN polarity applications. Package dimensions: length 10.4 mm, width 4.6 mm, height 29.75 mm.
Designed for through-hole mounting with a standard 3-pin TO-220 package. Maximum collector-base voltage of 800 volts and emitter-base voltage of 9 volts.
Explore more high voltage and power transistors from STMicroelectronics in the Electronics & Electricals category at EnvMart for advanced industrial and manufacturing applications.
Explore more products in our Bipolar Transistors category.
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