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| Country of Origin | Ireland |
|---|---|
| Brand | onsemi |
| Height | 0.46mm |
| Length | 4mm |
| Model | MICROFJ-40035-TSV-TR1 |
| Packaging | Tape & Reel |
| Width | 4mm |
| Mount Type | Surface |
| Series | J |
| Maximum Operating Temperature | 85°C |
| Package Type | TSV |
| Minimum Operating Temperature | -25°C |
| Polarity | Forward |
| Dark Current | 1nA |
| Standards/Approvals | RoHS |
| Number of Pins | 4 |
| Typical Fall Time | 0.6ns |
| Wavelength of Peak Sensitivity | 970nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 24.7V |
| Minimum Wavelength Detected | 200nm |
| Maximum Wavelength Detected | 900nm |
| Angle of Half Sensitivity | 65 ° |
onsemi MICROFJ-40035-TSV-TR1 is a high-density infrared photodiode designed using proprietary J-series sensor technology, featuring a unique fast output terminal for exceptional timing precision.
The device detects infrared light with a peak wavelength sensitivity at 970 nm and operates effectively within a spectral range from 200 nm to 900 nm. Packaged in a reflow solder-compatible chip-scale TSV (Through Silicon Via) package, it suits surface mount applications requiring compactness and reliability.
It has a 65° angle of half sensitivity, ensuring focused detection, with a 4-pin configuration to support robust mounting and electrical connectivity. Operating temperature ranges from -25°C to 85°C, allowing its use in various industrial and laboratory environments.
The photodiode exhibits ultra-low dark count rates of 50 kHz per mm² and typical rise and fall times of 0.6 nanoseconds, making it highly efficient for high-performance timing applications such as Time-of-Flight Positron Emission Tomography (ToF-PET).
The device ensures temperature stability of 21.5 mV/°C and breakdown voltage uniformity within ±250 mV, maintaining consistent operation under diverse conditions. Its compact dimensions - 4mm by 4mm face with 0.46mm height - facilitate integration into tight PCB layouts.
Detects infrared with a peak sensitivity at 970nm. 4-pin surface mount TSV chip-scale package for compact installation. Fast rise and fall times of 0.6ns for precise timing applications. Wide operating temperature from -25°C to 85°C for diverse environments.
Low dark current of 1nA enhances signal-to-noise ratio. High breakdown voltage of 24.7V ensures durability and reliability. RoHS compliant, manufactured in Ireland maintaining quality.
This infrared photodiode is ideal for use in industrial, laboratory instrumentation, electronics manufacturing, and advanced medical imaging sectors, especially where high-speed infrared detection and timing accuracy are essential.
Explore more Photodiode and infrared sensor solutions with onsemi and enhance your projects with reliable semiconductor components from EnvMart.
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