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onsemi NPN Darlington Transistor 2 A 100 V TO-252 Surface Mount 3-Pin MJD112T4G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model MJD112T4G
Mount Type Surface
Series MJD112
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 2A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.02mA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
onsemi MJD112T4G 1 Darlington Transistor NPN, 2 A 100 V HFE 200, 3-Pin DPAK

Key Features

  • TO-252 package suitable for surface mount applications.
  • Features a minimum DC current gain hFE of 200 for efficient amplification.
  • Capable of handling maximum power dissipation of 20 W.
  • Wide operating temperature range from -65°C to 150°C.
  • Includes automotive standard AEC-Q101 certification for reliability.
  • 3-pin configuration with NPN transistor polarity.
  • Maximum collector-emitter saturation voltage is 2 V ensuring low voltage drop.

Product Description

onsemi MJD112T4G is a high-performance NPN Darlington transistor designed for robust electronic applications requiring reliable switching and amplification capabilities. This transistor comes in a TO-252 surface mount package featuring a 3-pin configuration, suitable for compact circuit board designs.

It supports a maximum continuous collector current of 2 A and can block a collector-emitter voltage of up to 100 V, making it ideal for medium power applications in industrial and automotive electronic circuits.

The device has a minimum DC current gain (hFE) of 200, delivering efficient amplification and responsiveness in switching. With a maximum power dissipation of 20 W and an operating temperature range from -65°C to 150°C, it is reliable under varying thermal conditions.

This transistor meets the automotive standard AEC-Q101, certifying its suitability for automotive electronics systems and other demanding environments. Its small package size with compact dimensions of 6.73 mm length and 2.38 mm height enables easy integration in high-density PCBs.

TO-252 package suitable for surface mount applications. Maximum continuous collector current of 2 A. Collector-emitter voltage rating of 100 V. Minimum DC current gain (hFE) of 200. Maximum power dissipation of 20 W. Wide operating temperature range: -65°C to 150°C.

Automotive standard AEC-Q101 certified. Compact 3-pin design for space-efficient layouts.

This NPN Darlington transistor is well-suited for industrial electronics, automotive circuits, power management modules, and laboratory applications requiring reliable switching and amplification with compact dimensions.

Explore related Darlington Transistors and semiconductors in the Electronics & Electricals category at EnvMart.

onsemi NPN Darlington Transistor 2 A 100 V TO-252 Surface Mount 3-Pin MJD112T4G
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Frequently Asked Questions

The maximum continuous collector current for this model is 2 A.

It has a collector-emitter voltage rating of up to 100 V.

The minimum DC current gain (hFE) is 200, providing efficient amplification.

The maximum power dissipation is 20 W.

This transistor operates within a temperature range of -65°C to 150°C.

It comes in a TO-252 surface mount package.

This model features a 3-pin configuration.

It meets the automotive standard AEC-Q101, ensuring reliability in automotive applications.

The maximum collector-emitter saturation voltage is 2 V, ensuring low voltage drop.

The height is 2.38 mm and the length is 6.73 mm.

The transistor polarity is NPN.

It is suitable for industrial electronics, automotive circuits, and power management modules.

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