Infineon Bipolar Transistor NPN 80 mA 12 V Surface Mount 3-Pin SOT-23 Package BFR193E6327HTSA1

Infineon BFR193E6327HTSA1 is a precision NPN bipolar transistor designed for RF and general-purpose switching applications. It supports a maximum DC collector current of 80 mA and a collector-emitter voltage rating of 12 V, making it suitable for low-power amplification and switching tasks.

The transistor comes in a surface mount SOT-23 package with a compact footprint of 2.9 mm length, 2.4 mm width, and 1 mm height, facilitating high-density printed circuit board designs and automated assembly.

This model offers a high transition frequency of up to 8 GHz, ideal for high-frequency circuits in communication devices and industrial electronics. Its minimum DC current gain of 70 ensures reliable amplification performance.

With a maximum power dissipation of 580 mW and an operating temperature limit of 150°C, this transistor delivers robust performance in varied environments including automotive electronics, industrial automation, and consumer devices.

Key technical features include a maximum collector base voltage of 20 V, emitter base voltage of 2 V, and a 3-pin configuration optimized for surface mount technology. This BFR193 series transistor adheres to automotive standard AEC-Q101, verifying its suitability for critical automotive applications.

Its compact dimensions enable flexible use in space-constrained circuit designs. Manufactured in China, it assures production quality consistent with Infineon standards.

Available from EnvMart, this Infineon BFR193E6327HTSA1 transistor is suitable for electronic component inventories requiring reliable and compact Bipolar Transistors for high-frequency, low-power applications.