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onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-323 BC847CWT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model BC847CWT1G
Width 1.35mm
Mount Type Surface
Series BC847
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100 mA ensures efficient signal amplification.
  • Supports collector emitter voltage up to 45 V for reliable operation.
  • Compact 3-pin SOT-323 surface mount package for space-saving circuit layouts.
  • High minimum DC current gain (hFE) of 110 improves transistor performance.
  • Operating temperature range from -55°C to 150°C supports industrial applications.
  • Maximum transition frequency of 100 MHz enables high-speed switching.
  • Automotive standard AEC-Q101 qualification assures quality and reliability.
  • Maximum power dissipation of 150 mW for small signal applications.

Product Description

onsemi BC847CWT1G is a small signal NPN transistor designed primarily for surface mount applications on PCBs. It comes in a compact SOT-323 package with 3 pins, suitable for space-efficient electronic designs. The transistor supports a maximum DC collector current of 100 mA and can tolerate collector-emitter voltages up to 45 V, making it appropriate for low power signal amplification circuits in a variety of industrial, automotive, and electronic products.

Featuring a minimum DC current gain (hFE) of 110 and a maximum transition frequency of 100 MHz, this transistor delivers reliable switching and amplification performance in communication, control, and signal processing applications. The maximum power dissipation rating of 150 mW aligns with its role in small signal use cases.

The transistor operates reliably in extreme temperatures ranging from -55°C to 150°C, meeting rigorous automotive-grade standards under AEC-Q101, ensuring durability and consistency in harsh environments. Its typical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height provide compactness necessary for dense circuit boards.

This device is ideal for applications in industrial controls, automotive electronics, measuring instruments, and consumer electronics that require efficient, reliable switching and amplification of low-level signals.

Maximum DC collector current of 100 mA ensures efficient signal amplification. Supports collector emitter voltage up to 45 V for reliable operation. Compact 3-pin SOT-323 surface mount package for space-saving circuit layouts.

High minimum DC current gain (hFE) of 110 improves transistor performance. Operating temperature range from -55°C to 150°C supports industrial applications. Maximum transition frequency of 100 MHz enables high-speed switching.

Automotive standard AEC-Q101 qualification assures quality and reliability. Maximum power dissipation of 150 mW for small signal applications. Transistor polarity is NPN with single transistor configuration. Dimensions approximately 2.2 mm length, 1.35 mm width, and 1 mm height.

Explore the wide range of Bipolar Transistors and related semiconductor components on EnvMart for your electronic design and manufacturing needs.

onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-323 BC847CWT1G
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Frequently Asked Questions

The maximum DC collector current is 100 mA, which ensures efficient signal amplification.

It supports a collector-emitter voltage of up to 45 V for reliable operation in various applications.

The operating temperature range is from -55°C to 150°C, making it suitable for industrial applications.

This model comes in a compact SOT-323 surface mount package, which is designed for space-saving circuit layouts.

The minimum DC current gain (hFE) is 110, which enhances the performance of the transistor.

The maximum transition frequency is 100 MHz, enabling high-speed switching capabilities.

The dimensions are approximately 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

It meets the automotive standard AEC-Q101, ensuring quality and reliability for automotive applications.

The maximum power dissipation is rated at 150 mW, suitable for small signal applications.

The transistor polarity is NPN, and it has a single transistor configuration.

The maximum emitter-base voltage (VEBO) is 6 V, which is important for its operation.

It is suitable for applications in industrial controls, automotive electronics, measuring instruments, and consumer electronics that require efficient signal amplification.

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