Taiwan Semiconductor BZT52B7V5 RH is a single-element Zener diode designed for precise voltage regulation applications. It features a nominal Zener voltage of 7.5 V, 500 mW maximum power dissipation, and a tight voltage tolerance of 2%, making it suitable for protecting circuits from voltage spikes and voltage stabilization.
The diode is packaged in a compact SOD-123 surface mount case with 2 pins, allowing easy integration into dense PCB designs. It supports operating temperatures ranging from -65°C to 150°C, offering robustness for industrial, electrical, and electronic manufacturing environments.
This general purpose Zener diode has a maximum reverse leakage current of 900 nA, which reduces power loss and improves energy efficiency. The maximum Zener impedance of 15 Ω ensures stable voltage regulation under varying current conditions. The specified test current of 5 mA allows accurate characterization of voltage regulation behavior.
Applications include industrial power management, electronic component protection, and discrete semiconductor designs in consumer electronics and instrumentation. Its RoHS compliance aligns with modern environmental standards for electronic components.
This diode is designed for general purpose voltage regulation in electronic circuits. Surface mount SOD-123 package enables compact PCB mounting solutions. 500 mW power dissipation supports low power applications reliably.
Voltage tolerance of ±2% ensures precise and stable voltage reference. High temperature operation up to 150°C suits harsh electronic environments. Minimal reverse leakage current improves circuit energy efficiency. Compact size dimensions 3.7 mm length and 1 mm height suit dense designs.
RoHS certified ensuring compliance with environmental regulations.
The product is ideal for use in industrial electronics manufacturing, power supply regulation, instrumentation, automotive electronics not requiring automotive-specific standards, and general semiconductor electronic component assemblies. The compact form factor and robust electrical characteristics make it a versatile component in many discrete semiconductor applications.
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