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onsemi Transistor NPN Power 4 A 100 V DC TO-252 Surface Mount 3-Pin DPAK MJD243T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 10.41mm |
| Model | MJD243T4G |
| Width | 6.73mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V dc |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum DC Collector Current Idc | 4A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 10MHz |
Key Features
- Surface mount device with TO-252 (DPAK) package for efficient heat dissipation.
- High maximum power dissipation rating of 12.5 W allows robust operation.
- Designed for automotive applications meeting AEC-Q101 standard.
- Operating temperature range from -65°C to 150°C supports harsh environments.
- Features a minimum current gain (hFE) of 15 and transition frequency of 10 MHz.
- 3-pin configuration suitable for various electronic circuits.
- NPN polarity transistor suitable for amplification and switching applications.
Product Description
onsemi MJD243T4G is an NPN power transistor designed for high-performance electronic applications. It supports a maximum DC collector current of 4 A and can withstand up to 100 V DC collector-emitter voltage, ensuring reliable operation in demanding environments. Packaged in a TO-252 (DPAK) surface mount device, it offers effective heat dissipation essential for power semiconductor components.
This transistor features a maximum power dissipation of 12.5 W and a minimum DC current gain (hFE) of 15, making it suitable for amplification and switching tasks. It meets the automotive standard AEC-Q101, highlighting its durability and suitability for automotive electronics and other rugged uses.
The device functions efficiently over a wide temperature range from -65°C to 150°C and includes a maximum emitter-base voltage rating of 7 V as well as a collector-base voltage of 100 V DC. Its transition frequency is rated at 10 MHz, providing competent switching speeds in electronic circuits.
With compact physical dimensions - length of 10.41 mm, width of 6.73 mm, and height of 2.38 mm - the transistor is ideal for space-constrained applications. Its 3-pin DPAK layout supports easy integration onto circuit boards.
Surface mount TO-252 (DPAK) package ensures efficient heat management. Maximum DC collector current of 4 A allows handling of significant power loads. Wide operating temperature range enables use in industrial, automotive, and commercial electronics.
AEC-Q101 qualification ensures automotive-grade reliability. Compact size facilitates integration in modern electronic systems. NPN transistor suitable for power switching and amplification circuits. High maximum power dissipation rating for stable performance under load.
Rated for 100 V collector-emitter voltage and 7 V emitter-base voltage.
This onsemi transistor is well-suited for industrial, automotive, power management, and consumer electronics applications. It is an excellent choice for designers seeking reliable power transistors with robust thermal and electrical specs. Explore more bipolar Transistors and related components on EnvMart to find complementary devices and solutions.
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Frequently Asked Questions
The maximum collector-emitter voltage rating for this transistor is 100 V DC.
This model has a maximum power dissipation rating of 12.5 W.
The operating temperature range for this transistor is from -65°C to 150°C.
The minimum DC current gain (hFE) for this transistor is 15.
The dimensions of the TO-252 package are 10.41 mm in length, 6.73 mm in width, and 2.38 mm in height.
This transistor uses a surface mount type, specifically in a TO-252 (DPAK) package.
The maximum DC collector current for this transistor is 4 A.
Yes, this model meets the AEC-Q101 automotive standard, making it suitable for automotive applications.
The transition frequency of the MJD243T4G is rated at 10 MHz.
The maximum emitter-base voltage rating for this model is 7 V.
This transistor is suitable for power switching and amplification circuits in various electronic applications.
The MJD243T4G has a 3-pin configuration, suitable for integration into electronic circuits.
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