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| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.41mm |
| Model | SUM45N25-58-E3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SUM45N25-58 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 45A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 58mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 95nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1V |
Vishay SUM45N25-58-E3 is a high-performance N-Channel MOSFET transistor designed for power switching and amplification in industrial, automotive, and commercial electronic circuits. It supports a continuous drain current of 45 amperes and a maximum drain source voltage of 250 volts, ideal for robust operation in demanding electrical environments.
Featuring an enhancement channel mode, this device ensures efficient switching with a typical gate charge of 95 nanocoulombs at a gate-to-source voltage of 9.5 V. The low drain source resistance of 58 milliohms minimizes energy losses during conduction, improving overall circuit efficiency. It comes housed in a compact TO-263 surface mount package with three pins, enabling easy integration into PCBs with automated assembly lines.
The transistor operates reliably across a broad temperature range from -55°C up to 175°C, making it suitable for harsh industrial and automotive environments. It has a maximum power dissipation limit of 3.75 watts and a gate voltage tolerance of ±30 volts to ensure device protection under voltage spikes. The forward voltage is rated at 1 V, balancing performance and thermal characteristics.
High continuous drain current rating of 45 amperes for robust performance. Maximum drain source voltage of 250 volts enabling high voltage operation. Low drain source resistance of 58 milliohms to reduce conduction losses.
Enhancement channel mode for efficient switching with typical gate charge of 95 nC. Compact TO-263 package with dimensions 10.41 mm length, 9.65 mm width, and 4.83 mm height. Wide operating temperature range from -55°C to 175°C for industrial reliability.
Surface mount package facilitates automated PCB assembly. Maximum power dissipation of 3.75 watts suitable for medium power applications. Maximum gate source voltage rating ±30 V for gate protection. Forward voltage of 1 V for efficient conduction.
These attributes make the Vishay SUM45N25-58-E3 MOSFET well-suited for use in power management, switching regulators, motor control, DC-DC converters, and other electronic control systems requiring reliable and efficient transistor performance. Its surface mount form factor is compatible with various industrial and commercial electronic manufacturing processes.
Country of Origin: Taiwan, Province Of China. The product is new and manufactured to Vishay’s high-quality standards. Explore additional Semiconductors and MOSFET options in the Electronics & Electricals category at EnvMart to meet diverse application needs.
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