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Vishay N-Channel MOSFET, 45 A Continuous Drain Current, 250 V Maximum Drain Source Voltage, Enhancement Mode SUM45N25-58-E3

Category Semiconductor Brand Vishay Condition New

Specifications

Country of Origin Taiwan
Brand Vishay
Height 4.83mm
Length 10.41mm
Model SUM45N25-58-E3
Width 9.65mm
Mount Type Surface
Series SUM45N25-58
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 45A
Maximum Drain Source Voltage Vds 250V
Maximum Drain Source Resistance Rds 58mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.75W
Typical Gate Charge Qg @ Vgs 95nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1V

Key Features

  • High continuous drain current rating of 45 amperes for robust performance.
  • Maximum drain source voltage of 250 volts enabling high voltage operation.
  • Low drain source resistance of 58 milliohms to reduce conduction losses.
  • Enhancement channel mode for efficient switching with typical gate charge of 95 nC.
  • Compact TO-263 package with dimensions 10.41 mm length, 9.65 mm width, and 4.83 mm height.
  • Wide operating temperature range from -55°C to 175°C for industrial reliability.
  • Surface mount package facilitates automated PCB assembly.
  • Maximum power dissipation of 3.75 watts suitable for medium power applications.

Product Description

Vishay SUM45N25-58-E3 is a high-performance N-Channel MOSFET transistor designed for power switching and amplification in industrial, automotive, and commercial electronic circuits. It supports a continuous drain current of 45 amperes and a maximum drain source voltage of 250 volts, ideal for robust operation in demanding electrical environments.

Featuring an enhancement channel mode, this device ensures efficient switching with a typical gate charge of 95 nanocoulombs at a gate-to-source voltage of 9.5 V. The low drain source resistance of 58 milliohms minimizes energy losses during conduction, improving overall circuit efficiency. It comes housed in a compact TO-263 surface mount package with three pins, enabling easy integration into PCBs with automated assembly lines.

The transistor operates reliably across a broad temperature range from -55°C up to 175°C, making it suitable for harsh industrial and automotive environments. It has a maximum power dissipation limit of 3.75 watts and a gate voltage tolerance of ±30 volts to ensure device protection under voltage spikes. The forward voltage is rated at 1 V, balancing performance and thermal characteristics.

High continuous drain current rating of 45 amperes for robust performance. Maximum drain source voltage of 250 volts enabling high voltage operation. Low drain source resistance of 58 milliohms to reduce conduction losses.

Enhancement channel mode for efficient switching with typical gate charge of 95 nC. Compact TO-263 package with dimensions 10.41 mm length, 9.65 mm width, and 4.83 mm height. Wide operating temperature range from -55°C to 175°C for industrial reliability.

Surface mount package facilitates automated PCB assembly. Maximum power dissipation of 3.75 watts suitable for medium power applications. Maximum gate source voltage rating ±30 V for gate protection. Forward voltage of 1 V for efficient conduction.

These attributes make the Vishay SUM45N25-58-E3 MOSFET well-suited for use in power management, switching regulators, motor control, DC-DC converters, and other electronic control systems requiring reliable and efficient transistor performance. Its surface mount form factor is compatible with various industrial and commercial electronic manufacturing processes.

Country of Origin: Taiwan, Province Of China. The product is new and manufactured to Vishay’s high-quality standards. Explore additional Semiconductors and MOSFET options in the Electronics & Electricals category at EnvMart to meet diverse application needs.

Vishay N-Channel MOSFET, 45 A Continuous Drain Current, 250 V Maximum Drain Source Voltage, Enhancement Mode SUM45N25-58-E3
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Frequently Asked Questions

The Vishay SUM45N25-58-E3 has a maximum continuous drain current rating of 45 amperes.

This model supports a maximum drain source voltage of 250 volts, making it suitable for high voltage applications.

The typical gate charge for this MOSFET is 95 nanocoulombs at a gate-to-source voltage of 9.5 V.

The dimensions of the TO-263 package are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height.

It operates reliably over a wide temperature range from -55°C to 175°C.

The maximum power dissipation for the Vishay SUM45N25-58-E3 is 3.75 watts.

The low drain source resistance is 58 milliohms, which helps reduce conduction losses.

This model features an enhancement channel mode, which allows for efficient switching.

The maximum gate source voltage rating is ±30 volts, providing protection against voltage spikes.

It is suitable for power management, switching regulators, motor control, and DC-DC converters.

The TO-263 package has a pin count of 3.

The Vishay SUM45N25-58-E3 is manufactured in Taiwan, Province Of China.

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