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onsemi PNP Bipolar Transistor, Maximum DC Collector Current 500 mA, Collector Emitter Voltage 300 V, 3-Pin TO-252 MJD350T4G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model MJD350T4G
Width 6.22mm
Mount Type Surface
Series MJD340
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -300V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.56W
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single

Key Features

  • Single transistor configuration offers reliable PNP operation.
  • TO-252 package with 3 pins suitable for surface mounting.
  • Maximum power dissipation rated at 1.56 watts.
  • Wide operating temperature range from -65°C to 150°C.
  • Minimum DC current gain (hFE) of 30 ensures stable performance.
  • Collector-base voltage maximum rating of 300 volts.
  • Emitter-base voltage rating up to 3 volts protects against breakdown.
  • Automotive qualified to AEC-Q101 standard for high reliability.

Product Description

onsemi MJD350T4G is a high-quality PNP bipolar transistor designed for use in electronic components and power connectors, specifically targeted for discrete semiconductor applications. It is packaged in a TO-252 surface mount configuration with 3 pins, making it suitable for compact PCB designs.

This transistor boasts a maximum DC collector current of 500 mA and can withstand a collector-emitter voltage of 300 V, making it suitable for medium power switching and amplification tasks. The maximum power dissipation of 1.56 watts supports efficient thermal management in circuit designs.

The device features a wide operating temperature range from -65°C up to 150°C, enabling reliability in harsh environmental conditions. The device’s minimum DC current gain (hFE) of 30 provides stable amplification characteristics.

Additional protective ratings include a maximum collector-base voltage of 300 V and an emitter-base voltage limit of 3 V, ensuring robust operation and preventing damage from voltage spikes.

Its compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height allow for space-saving designs. The transistor is also automotive qualified to the stringent AEC-Q101 standard, which guarantees high performance and durability for automotive and industrial applications.

Single transistor configuration for reliable PNP performance. TO-252 package type supports surface mounting on PCBs. Reliable operation up to 500 mA collector current. High voltage tolerance with 300 V collector-emitter max rating.

Efficient power dissipation of 1.56 watts for thermal control. Wide temperature operating range from -65°C to 150°C. Minimum DC current gain (hFE) of 30 ensures consistent performance. Compact physical dimensions allow for space-efficient applications.

Automotive AEC-Q101 qualification assures high reliability.

This transistor is suitable for industrial, automotive, and commercial electronic applications where reliable switching and amplification are required. It is ideal for use in power supply circuits, amplifiers, and other semiconductor circuits demanding robust PNP transistor performance.

Explore more semiconductors and Bipolar Transistors on EnvMart to find suitable components for your electronic design projects.

onsemi PNP Bipolar Transistor, Maximum DC Collector Current 500 mA, Collector Emitter Voltage 300 V, 3-Pin TO-252 MJD350T4G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

This transistor has a maximum collector-emitter voltage rating of 300 V.

The maximum power dissipation for this unit is rated at 1.56 watts.

It operates within a wide temperature range from -65°C to 150°C.

The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

The minimum DC current gain (hFE) for this transistor is 30.

Yes, this model is automotive qualified to the AEC-Q101 standard.

It uses a single transistor configuration for reliable PNP operation.

The maximum emitter-base voltage rating for this transistor is 3 V.

This model supports surface mounting, suitable for compact PCB designs.

It is suitable for industrial, automotive, and commercial electronic applications, including power supply circuits and amplifiers.

The maximum collector-base voltage rating is 300 V.

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