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onsemi Transistor NPN General Purpose 1 A 80 V 30 W TO-225 3-Pin 2N4923G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 3mm |
| Length | 27.73mm |
| Model | 2N4923G |
| Width | 7.8mm |
| Mount Type | Through Hole |
| Series | 2N4923 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-225 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Power Dissipation Pd | 30W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 3MHz |
Key Features
- General purpose NPN transistor with single transistor configuration.
- Maximum power dissipation of 30 Watts for robust operation.
- Through hole mount type providing easy PCB assembly.
- Operational temperature range from -65°C to 150°C.
- Minimum DC current gain of 10 and maximum transition frequency of 3 MHz.
- Compact dimensions measuring 27.73mm length by 7.8mm width and 3mm height.
- 3-pin design suitable for various electronic circuits.
- No automotive standards compliance, focused on general electronic applications.
Product Description
onsemi 2N4923G Bipolar Junction Transistor is a reliable general purpose NPN transistor designed for discrete semiconductor applications. It supports a maximum DC collector current of 1 A and withstands collector emitter voltages up to 80 V, making it suitable for moderate power electronics use.
The transistor is housed in a TO-225 package with 3 pins, supporting through hole mounting to ease PCB assembly. Its power dissipation capability of 30 W enables use in demanding conditions while maintaining performance.
Featuring a single transistor configuration with a low minimum DC gain (hFE) of 10 and a maximum transition frequency of 3 MHz, this transistor accommodates numerous electronic circuit designs requiring moderate frequency response.
Operating temperature ranges widely from -65°C to a high 150°C, ensuring reliability over diverse industrial and commercial environments. The compact footprint with dimensions of 27.73mm length, 7.8mm width, and 3mm height facilitates integration without excessive space demands.
This transistor does not conform to automotive standards but offers solid performance for power electronics, amplifiers, switching, and general-purpose electronic circuits. General purpose NPN transistor with single transistor configuration.
Maximum power dissipation of 30 Watts for robust operation. Through hole mount type providing easy PCB assembly. Operational temperature range from -65°C to 150°C. Minimum DC current gain of 10 and maximum transition frequency of 3 MHz.
Compact dimensions measuring 27.73mm length by 7.8mm width and 3mm height. 3-pin design suitable for various electronic circuits. No automotive standards compliance, focused on general electronic applications.
This product is ideal for use in industrial, consumer electronics, and laboratory electronic designs requiring dependable discrete transistor solutions. For more high-quality semiconductor options, explore the Electronics & Electricals categories on EnvMart.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum power dissipation of this transistor is 30 Watts, allowing for robust operation in various applications.
The operational temperature range for the 2N4923G is from -65°C to 150°C, ensuring reliability in diverse environments.
This model measures 27.73mm in length, 7.8mm in width, and 3mm in height, making it compact for various circuit designs.
The maximum collector emitter voltage (Vceo) for the 2N4923G is 80V, suitable for moderate power electronics applications.
The minimum DC current gain (hFE) of this transistor is 10, which is adequate for many electronic circuit designs.
This transistor supports through hole mounting, facilitating easy assembly on printed circuit boards (PCBs).
The maximum DC collector current (Idc) for the 2N4923G is 1 A, allowing it to handle moderate power levels in applications.
The maximum transition frequency (ft) of this transistor is 3 MHz, suitable for applications requiring moderate frequency response.
The transistor is housed in a TO-225 package type, which is designed for discrete semiconductor applications.
The transistor polarity for this model is NPN, making it suitable for various electronic circuit configurations.
The maximum emitter base voltage (VEBO) for the 2N4923G is 5V, which is important for ensuring proper operation in circuits.
No, the 2N4923G does not conform to automotive standards; it is focused on general electronic applications.
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