Microchip N-Channel Enhancement Mode MOSFET 10.3 A 650 V 3-Pin TO-92 TN5325K1-G

Microchip TN5325K1-G is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. Featuring a vertical DMOS structure and a silicon gate process, it combines high input impedance with robust power handling capabilities. With a maximum continuous drain current of 10.3 A and a drain-source voltage rating of 650 V, this MOSFET performs efficiently under demanding electrical loads.

The device operates with a low threshold voltage, not exceeding 2 V, allowing fast switching with minimal losses. Its positive temperature coefficient ensures stability and prevents thermal runaway, making it reliable for applications spanning from industrial automation to power management systems. The forward voltage of 1.8 V and a power dissipation capacity of 140 W underline its suitability for medium to high power circuits.

The TN5325K1-G MOSFET is housed in a compact 3-pin TO-92 package compatible with through-hole mounting on printed circuit boards, facilitating versatile assembly options. It maintains operational integrity across a broad temperature range from -55°C to 150°C and supports a maximum gate-source voltage of 30 V for safe gate drive operation.

Typical features include rise and fall times of approximately 15 ns and 25 ns respectively, optimizing switching speed in various power electronics and control systems. This device is widely used in applications such as power supplies, industrial controls, signal amplification, and low-voltage inverters.

Microchip's commitment to quality ensures that the TN5325K1-G meets rigorous electrical performance standards without automotive certifications. This semiconductor component enhances efficiency and reliability in discrete power electronic circuits.

This MOSFET offers low threshold voltage with high gain and input impedance. The vertical DMOS construction increases durability and power handling. Its thermal characteristics prevent secondary breakdown and thermal runaway.

Designed for through-hole mounting, it is easy to integrate into PCB designs. Suitable for industrial, laboratory, and power management applications. Maximum power dissipation of 140 W supports robust operation under load.

Supports operating temperatures from -55°C up to 150°C for environmental resilience. The 3-pin TO-92 package provides a compact footprint for space-constrained systems. Explore our wide selection of discrete semiconductor devices at EnvMart to find solutions tailored to your industrial and electronic design needs.