Renesas Electronics Dual NPN + PNP Bipolar Transistor Array, 65 mA Collector Current, 8 V Collector Emitter HFA3096BZ

Renesas Electronics HFA3096BZ is a high-performance dual NPN and PNP bipolar transistor array designed for ultra high frequency applications. Housed in a 16-pin SOIC surface mount package, this device integrates five closely matched transistors ensuring superior electrical and thermal characteristics.

Manufactured using Renesas complementary bipolar UHF-1 process, the array features an NPN transistor with a cutoff frequency (fT) of 8 GHz and a PNP transistor with a cutoff frequency of 5.5 GHz, making it ideal for RF amplification and signal processing. The maximum DC collector current is rated at 65 mA with a collector emitter voltage up to 8 V and a power dissipation of 150 mW, enabling robust operation in demanding circuits.

Its operating temperature range from -55°C to 125°C accommodates industrial and automotive temperature variations, although it is not certified for automotive standards. The SOIC package offers a compact, surface-mount form factor measuring approximately 9.9 mm in length, 6 mm in width, and 1.75 mm in height, easing PCB design and assembly.

This transistor array is designed for applications such as RF amplifiers, communication equipment, and general-purpose electronic circuits requiring matched transistor pairs for performance tuning and noise reduction. The noise figure at 1.0 GHz is 3.5 dB, suitable for low-noise signal applications. The device also exhibits low collector-to-collector leakage currents, enhancing circuit stability and reliability.

This transistor array delivers ultra-high frequency performance with dual NPN and PNP transistors. Maximum DC collector current is 65 mA with a maximum collector emitter voltage of 8 V. The package is a compact 16-pin SOIC for surface mounting.

Operating temperature range from -55°C to 125°C supports industrial applications. Monolithic construction ensures excellent electrical and thermal matching of five transistors. Featuring NPN transistor cutoff frequency of 8 GHz and PNP cutoff frequency of 5.5 GHz.

Maximum power dissipation rated at 150 mW for reliable operation. The device is ideal for RF amplification, communication, and high frequency switching circuits. Noise figure of 3.5 dB at 1 GHz promotes low-noise design.

Compact physical dimensions allow flexible PCB integration. Explore comprehensive solutions in the Bipolar Transistors category on EnvMart for precision electronic components from trusted brands like Renesas Electronics.