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Infineon 650 V 40 A Silicon Carbide Schottky Switching Diode, 3-Pin TO-247 IDW40G65C5XKSA1

Category Schottky Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 41.42mm
Length 16.13mm
Model IDW40G65C5XKSA1
Width 5.21mm
Mount Type Through Hole
Series 5th Generation thinQ!TM
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals J-STD20 and JESD22
Pin Count 3
Maximum Continuous Forward Current If 40A
Peak Reverse Repetitive Voltage Vrrm 650V
Diode Configuration Silicon Carbide Schottky Diode
Rectifier Type Schottky
Peak Reverse Current Ir 220μA
Peak Non-Repetitive Forward Surge Current Ifsm 182A
Maximum Forward Voltage Vf 1.7V

Key Features

  • Operates at a peak reverse repetitive voltage of 650 V for robust high-voltage applications.
  • Supports maximum continuous forward current of 40 A for sustained load handling.
  • Maximum forward voltage drop of 1.7 V minimizes conduction losses and improves efficiency.
  • Surge capability of 182 A (Ifsm) ensures transient event protection.
  • Peak reverse leakage current is low at 220 μA, reducing standby power consumption.
  • Wide operating temperature range from -55°C up to 175°C supports harsh environments.
  • Through-hole mount in a TO-247 3-pin package for easy assembly on power boards.
  • Meets J-STD-020 and JESD22 standards for thermal and mechanical reliability.

Product Description

Infineon IDW40G65C5XKSA1 is a 5th Generation thinQ! silicon carbide Schottky switching diode designed to deliver high performance in demanding power electronics applications. Rated for a peak reverse repetitive voltage of 650 V and maximum continuous forward current of 40 A, this device offers efficient fast switching with low forward voltage and excellent surge tolerance up to 182 A.

The diode is constructed using silicon carbide technology, which provides very low forward voltage drop of up to 1.7 V and peak reverse leakage current of only 220 μA. Its robust design allows operation in wide temperature conditions ranging from -55°C to 175°C, making it suitable for industrial and automotive power conversion systems.

Supplied in a 3-pin TO-247 package for through-hole mounting, it is ideal for integration into power assemblies requiring high voltage switching with minimal energy loss. The device complies with J-STD-020 and JESD22 standards to ensure reliable thermal and mechanical performance in harsh operating environments.

This Schottky diode is particularly beneficial in high-voltage diode stages of switch-mode power supplies, industrial inverters, and transient protection circuits where efficiency and thermal robustness are critical. Heat sinking is recommended for applications involving sustained high currents and elevated temperatures.

Peak reverse voltage rating of 650 V supports high voltage switching loads. Continuous forward current of 40 A enables handling of heavy power demands. Designed for low conduction loss with a max forward voltage of 1.7 V.

Transient surge current rating of 182 A accommodates short-term high load events. Low peak reverse leakage current minimizes standby energy drain. Operational temperature range from -55°C to +175°C ensures versatility in harsh environments.

Standard TO-247 3-pin through-hole package aids in assembly and cooling. Meets industry thermal and mechanical standards (J-STD-020, JESD22).

For engineers in industrial manufacturing, power electronics, HVAC systems, and automotive power modules, the Infineon IDW40G65C5XKSA1 delivers a reliable, efficient, and high-performance solution. Explore more Infineon semiconductor solutions and Schottky Diode variants on EnvMart for your next project.

Infineon 650 V 40 A Silicon Carbide Schottky Switching Diode, 3-Pin TO-247 IDW40G65C5XKSA1
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Frequently Asked Questions

The diode has a peak reverse repetitive voltage rating of 650 V, making it suitable for high-voltage applications.

It supports a maximum continuous forward current of 40 A, allowing it to manage substantial load demands.

The maximum forward voltage drop is 1.7 V, which helps minimize conduction losses and improve efficiency.

This model has a peak non-repetitive forward surge current capability of 182 A, providing protection during transient events.

It operates in a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.

This model features a through-hole mount in a TO-247 package, facilitating easy assembly on power boards.

It meets J-STD-020 and JESD22 standards, ensuring reliable thermal and mechanical performance.

The dimensions are 41.42 mm in height, 16.13 mm in length, and 5.21 mm in width.

The peak reverse leakage current is low at 220 μA, which helps reduce standby power consumption.

It is configured as a Silicon Carbide Schottky Diode, designed for efficient fast switching.

It is particularly beneficial in high-voltage diode stages of switch-mode power supplies, industrial inverters, and transient protection circuits.

The TO-247 package has a pin count of 3, which is standard for this type of mounting.

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