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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 41.42mm |
| Length | 16.13mm |
| Model | IDW40G65C5XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | 5th Generation thinQ!TM |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD20 and JESD22 |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 40A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Silicon Carbide Schottky Diode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 220μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 182A |
| Maximum Forward Voltage Vf | 1.7V |
Infineon IDW40G65C5XKSA1 is a 5th Generation thinQ! silicon carbide Schottky switching diode designed to deliver high performance in demanding power electronics applications. Rated for a peak reverse repetitive voltage of 650 V and maximum continuous forward current of 40 A, this device offers efficient fast switching with low forward voltage and excellent surge tolerance up to 182 A.
The diode is constructed using silicon carbide technology, which provides very low forward voltage drop of up to 1.7 V and peak reverse leakage current of only 220 μA. Its robust design allows operation in wide temperature conditions ranging from -55°C to 175°C, making it suitable for industrial and automotive power conversion systems.
Supplied in a 3-pin TO-247 package for through-hole mounting, it is ideal for integration into power assemblies requiring high voltage switching with minimal energy loss. The device complies with J-STD-020 and JESD22 standards to ensure reliable thermal and mechanical performance in harsh operating environments.
This Schottky diode is particularly beneficial in high-voltage diode stages of switch-mode power supplies, industrial inverters, and transient protection circuits where efficiency and thermal robustness are critical. Heat sinking is recommended for applications involving sustained high currents and elevated temperatures.
Peak reverse voltage rating of 650 V supports high voltage switching loads. Continuous forward current of 40 A enables handling of heavy power demands. Designed for low conduction loss with a max forward voltage of 1.7 V.
Transient surge current rating of 182 A accommodates short-term high load events. Low peak reverse leakage current minimizes standby energy drain. Operational temperature range from -55°C to +175°C ensures versatility in harsh environments.
Standard TO-247 3-pin through-hole package aids in assembly and cooling. Meets industry thermal and mechanical standards (J-STD-020, JESD22).
For engineers in industrial manufacturing, power electronics, HVAC systems, and automotive power modules, the Infineon IDW40G65C5XKSA1 delivers a reliable, efficient, and high-performance solution. Explore more Infineon semiconductor solutions and Schottky Diode variants on EnvMart for your next project.
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