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STMicroelectronics 650 V 4 A Silicon Carbide Power Schottky Diode Surface Mount TO-263 Package STPSC4H065B-TR
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 3.75mm |
| Brand | STMicroelectronics |
| Height | 4.5mm |
| Length | 28.25mm |
| Model | STPSC4H065B-TR |
| Width | 10mm |
| Mount Type | Surface |
| Series | STPSC |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 4A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Peak Reverse Current Ir | 35μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A |
| Maximum Forward Voltage Vf | 2.25V |
Key Features
- This diode features ultra high performance silicon carbide substrate for enhanced efficiency.
- Maximum continuous forward current rating is 4 A ensuring robust power handling.
- Peak reverse repetitive voltage is 650 V for reliable voltage blocking.
- High forward surge current capability of 200 A supports transient load conditions.
- Wide operating temperature range from -40°C to 175°C ensures durability in harsh environments.
- Characteristic maximum forward voltage of 2.25 V maintains energy efficiency.
- Compact dimensions with length 28.25 mm, width 10 mm, height 4.5 mm, and diameter 3.75 mm fit various electronic designs.
- Low peak reverse current of 35 μA minimizes leakage in circuits.
Product Description
STMicroelectronics STPSC4H065B-TR is a high-performance 650 V silicon carbide (SiC) power Schottky diode designed for advanced power electronics applications. Its surface mount TO-263 package supports a maximum continuous forward current of 4 A, making it suitable for demanding industrial and electronic systems.
Constructed using a silicon carbide substrate, this power diode delivers superior switching performance with zero reverse recovery charge within its operating current range, which enhances overall efficiency and reduces losses during hard switching conditions. The device is engineered to sustain a high forward surge current of 200 A, providing excellent robustness against transient surges often experienced in power electronics environments.
The diode operates reliably over a temperature range from -40°C to 175°C, ensuring stable performance in a variety of industrial and commercial applications including power supplies, motor drives, and solar inverters. Its compact physical dimensions (length 28.25 mm, width 10 mm, height 4.5 mm) facilitate integration into high-density circuit layouts.
Key technical advantages of the STPSC4H065B-TR include minimal switching losses due to the Schottky barrier design, a low maximum forward voltage drop of 2.25 V which contributes to power saving, and a low peak reverse current of just 35 μA, reducing leakage currents.
Ultra high-performance silicon carbide substrate enhances efficiency and durability. High forward surge capability ensures robust operation during transient phases. No reverse recovery charge in the application current range for efficient switching.
Compact TO-263 surface mount package supports ease of PCB assembly. Wide temperature tolerance expands use in harsh industrial conditions. Low leakage and forward voltage improve overall energy efficiency. Single diode configuration optimized for power rectification and switching tasks.
This product is ideal for industrial, electronics manufacturing, and power supply design sectors seeking reliable, high-efficiency Schottky diode solutions. Its rugged construction and advanced semiconductor technology make it a smart choice for enhancing power conversion systems.
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Frequently Asked Questions
The maximum continuous forward current rating for this diode is 4 A.
The peak reverse repetitive voltage of this diode is 650 V.
The maximum forward voltage drop for this model is 2.25 V.
This diode has a peak forward surge current capability of 200 A.
The operating temperature range for this diode is from -40°C to 175°C.
This diode has dimensions of 28.25 mm in length, 10 mm in width, and 4.5 mm in height.
The STPSC4H065B-TR comes in a TO-263 surface mount package.
The peak reverse current for this diode is 35 μA.
The diode configuration of this model is single.
This diode supports surface mounting.
The country of origin for this diode is India.
The STPSC4H065B-TR belongs to the STPSC series.
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