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onsemi Digital Transistor, 25 V NPN Single Configuration Surface Mount SOT-23 Package MMBT4124LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3.04mm
Model MMBT4124LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 120
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 30V
Maximum Power Dissipation Pd 300W
Transistor Configuration Single

Key Features

  • Features a maximum collector-emitter voltage of 25 V.
  • Uses a 3-pin SOT-23 package designed for surface mounting.
  • Provides a minimum DC current gain (hFE) of 120.
  • Maximum power dissipation rating of 300 W.
  • Operates at maximum temperature up to 150°C.
  • Maximum collector-base voltage is 30 V.
  • Maximum emitter-base voltage is 5 V DC.
  • Compact dimensions of 3.04 mm length, 2.64 mm width, and 1.1 mm height.

Product Description

onsemi MMBT4124LT1G digital transistor is an NPN bipolar transistor engineered for both linear and switching applications in electronic circuits. Encapsulated in a surface mount SOT-23 package, this device is optimized for lower power dissipation and compact PCB layouts.

It offers a maximum collector-emitter voltage (Vceo) of 25 V and a collector-base voltage (Vcbo) of 30 V, ensuring robust operation within specified voltage limits. The transistor supports a minimum DC current gain (hFE) of 120, enabling effective amplification in digital switching tasks.

The maximum power dissipation is rated at 300 W, permitting reliable thermal performance under standard operating conditions, with an operational temperature range up to 150°C. Its compact footprint, measuring 3.04 mm in length, 2.64 mm width, and 1.1 mm height, suits high-density electronic assembly requirements.

This device includes three pins in the SOT-23 package form factor, ideal for surface mounting technology in modern electronics. It does not conform to automotive standards, aligning it more with general electronics and industrial applications.

Compact SOT-23 package for surface mounting and space-saving PCB design. Maximum collector-emitter voltage of 25 V suitable for low power applications. High minimum DC current gain of 120 ensures efficient digital transistor operation.

Handles up to 300 W power dissipation for thermal reliability. Maximum operating temperature of 150°C extends usage range. Three-pin configuration for digital transistor versatility. Maximum collector-base voltage of 30 V and emitter-base voltage of 5 V DC for safe operation.

Small dimensions enable integration into compact circuits.

This transistor is extensively used in electronics, industrial automation, and power control applications. Its digital transistor configuration is suited for switching and amplification, supporting circuit designers in creating efficient and compact solutions.

Explore EnvMart's extensive catalog of Bipolar Transistors for diverse electronic components and solutions.

onsemi Digital Transistor, 25 V NPN Single Configuration Surface Mount SOT-23 Package MMBT4124LT1G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 25 V.

This model is encapsulated in a surface mount SOT-23 package.

It has a minimum DC current gain (hFE) of 120, which supports effective amplification.

The maximum power dissipation rating for this transistor is 300 W.

The dimensions of this model are 3.04 mm in length, 2.64 mm in width, and 1.1 mm in height.

This transistor operates at a maximum temperature of 150°C.

The maximum collector-base voltage (Vcbo) is 30 V.

It features a three-pin configuration suitable for surface mounting applications.

The maximum emitter-base voltage (VEBO) is 5 V DC.

This model is an NPN bipolar transistor designed for both linear and switching applications.

It is extensively used in electronics, industrial automation, and power control applications.

The country of origin for this transistor is India.

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