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onsemi Digital NPN Transistor 100 mA 50 V 6-Pin SOT-363 MUN5233DW1T1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.1mm
Length 2.2mm
Model MUN5233DW1T1G
Width 1.35mm
Mount Type Surface
Series MUN5233DW1T1G
Maximum Operating Temperature 150°C
Package Type SOT-363
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Dual
onsemi MUN5233DW1T1G Transistor, 100 mA NPN, 50 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Features a built-in monolithic bias resistor network to simplify circuit design and reduce component count.
  • Surface mount package SOT-363 with 6 pins for compact PCB integration.
  • Supports dual transistor configuration with a minimum DC current gain of 80.
  • Maximum power dissipation rated at 250 mW and operates up to 150°C.
  • Designed to provide reliable performance meeting RoHS and AEC-Q101 automotive standards.
  • Eliminates external resistor bias networks saving board space and lowering system costs.
  • Contains Pb-free and halogen-free materials ensuring environmental compliance.

Product Description

onsemi MUN5233DW1T1G Digital NPN Transistor is specifically engineered to integrate a transistor and its bias resistors in one compact device. This 6-pin SOT-363 surface mount transistor is suitable for design simplification and cost reduction in electronic circuits requiring low collector current and voltage.

The device includes two monolithic resistors internally connected in series with the base and emitter terminals, effectively replacing discrete resistors in circuit designs. This integration improves reliability, reduces component count, and optimizes PCB layout efficiency.

Operating up to 150°C, the transistor supports a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 50 V. It exhibits a minimum DC current gain (hFE) of 80 and dissipates up to 250 mW power, ensuring robust performance in diverse electronic applications.

Compliant with RoHS and AEC-Q101 automotive standards, the transistor is well-suited for automotive, industrial, and consumer electronics requiring high reliability and compact form factors. Its dual transistor configuration and small dimensions (2.2 mm length, 1.35 mm width, 1.1 mm height) allow for versatile PCB mounting and circuit design.

Built-in bias resistor network for integrated transistor operation. Surface-mount SOT-363 package supports efficient PCB layout. Optimized for low power and moderate voltage applications. Environmental compliance with Pb-free and halogen-free materials.

Meets automotive grade reliability with AEC-Q101 certification.

This transistor is ideal for designers aiming to reduce circuit complexity and minimize board space usage while maintaining stable electrical performance. The device is manufactured in China and supports a wide range of commercial and industrial electronic design needs.

Explore more semiconductor components and transistors for advanced electronic circuit design at EnvMart.

Explore more products in our Digital Transistor category.

onsemi Digital NPN Transistor 100 mA 50 V 6-Pin SOT-363 MUN5233DW1T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum collector-emitter voltage of 50 V.

The minimum DC current gain (hFE) for this transistor is 80.

This model has a length of 2.2 mm, a width of 1.35 mm, and a height of 1.1 mm.

The maximum power dissipation rated for the MUN5233DW1T1G is 250 mW.

It comes in a surface mount SOT-363 package with 6 pins.

The maximum operating temperature for the MUN5233DW1T1G is 150°C.

Yes, it meets RoHS and AEC-Q101 automotive standards.

This model features NPN transistor polarity.

Yes, it features a built-in monolithic bias resistor network to simplify circuit design and reduce component count.

This transistor is suitable for automotive, industrial, and consumer electronics requiring high reliability and compact form factors.

The MUN5233DW1T1G is manufactured in China.

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