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onsemi Digital Transistor 50 V NPN Surface Mount SOT-23 3-Pin MMUN2235LT1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMUN2235LT1G
Width 1.4mm
Mount Type Surface
Series MMUN2235L
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 400mW
Transistor Configuration Single
onsemi MMUN2235LT1G Digital Transistor, 50 V NPN Surface SOT-23, 3-PinBrand onsemi
Nexperia PDTC123JT,215 Digital Transistor, 100 mA NPN, 50 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Maximum Collector-Emitter Voltage of 50 V ensures robust performance under varying loads.
  • Integrated monolithic bias network reduces the need for external resistors.
  • Compact SOT-23 package minimizes board space usage.
  • Minimum DC Current Gain (hFE) of 80 for reliable amplification.
  • Maximum Power Dissipation is 400 mW supporting moderate power applications.
  • Automotive standard compliant with AEC-Q101 for reliability in harsh environments.
  • Maximum Operating Temperature of 150°C for enhanced thermal stability.
  • NPN transistor polarity suitable for standard digital switching circuits.

Product Description

onsemi MMUN2235LT1G is a digital transistor featuring a single NPN bipolar transistor with an integrated bias resistor network embedded in a compact SOT-23 surface mount package. The device is engineered to replace traditional transistor-plus-resistor circuits, simplifying design and reducing component count and PCB area.

This transistor offers a maximum collector-emitter voltage of 50 V and maximum power dissipation of 400 mW, making it suitable for a wide range of electronic switching applications, including automotive and industrial sectors. Its minimum DC current gain of 80 ensures dependable switching and amplification performance.

Designed to meet the AEC-Q101 automotive standard, the MMUN2235LT1G excels in demanding environments, capable of operating up to 150°C. The component’s dimensions (3.04 mm length, 1.4 mm width, and 1.11 mm height) make it a compact choice for space-constrained circuit designs.

By integrating two resistors internally - a series base resistor and a base-emitter resistor - this device reduces the number of external components needed for biasing, thereby simplifying circuitry and lowering overall system cost.

Maximum Collector-Emitter Voltage of 50 V. Integrated monolithic bias resistor network. Compact surface mount SOT-23 package. Minimum DC Current Gain (hFE) of 80. Maximum Power Dissipation of 400 mW. Automotive standard compliant: AEC-Q101.

Operating temperature up to 150°C. Compact physical dimensions for PCB space efficiency.

This transistor is widely applicable in electronics manufacturing, automotive electronics, industrial automation, and general-purpose switching and amplification circuits where board space and design simplification are critical.

Explore more semiconductor components and Digital Transistors on EnvMart to support your electronic design projects.

onsemi Digital Transistor 50 V NPN Surface Mount SOT-23 3-Pin MMUN2235LT1G
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Frequently Asked Questions

The maximum collector-emitter voltage of this model is 50 V, making it suitable for various electronic switching applications.

It comes in a compact SOT-23 surface mount package, which helps minimize board space usage.

The minimum DC current gain (hFE) of this transistor is 80, ensuring reliable amplification performance.

The maximum power dissipation for the MMUN2235LT1G is 400 mW, supporting moderate power applications.

This model can operate at a maximum temperature of 150°C, providing enhanced thermal stability.

Yes, it is compliant with the AEC-Q101 automotive standard, ensuring reliability in harsh environments.

The dimensions of this model are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

It features a single NPN transistor configuration, suitable for standard digital switching circuits.

The MMUN2235LT1G has a pin count of 3, making it compact and easy to integrate into designs.

The integrated monolithic bias network reduces the need for external resistors, simplifying design and lowering component count.

This transistor is widely applicable in electronics manufacturing, automotive electronics, and general-purpose switching and amplification circuits.

The country of origin for this model is China.

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