ROHM P-Channel MOSFET, 2 A, 20 V Enhancement Mode, 3-Pin TSMT Package RTR020P02

ROHM RTR020P02 is a high-performance P-Channel MOSFET transistor in a 3-Pin TSMT surface mount package, optimized for switching and amplification applications in electronic circuits. It supports a maximum continuous drain current of 2 amperes and a maximum drain-source voltage of 20 volts. This device operates in enhancement mode, providing efficient control of current flow with low gate charge of 4.9 nanocoulombs at standard gate voltage, enabling rapid switching.

The transistor features a low drain-source resistance of 250 milliohms, minimizing conduction losses and improving overall circuit efficiency. It can dissipate up to 1 watt of power, making it suitable for moderate power applications with operating temperatures up to 150°C, ensuring stability in demanding environments.

Constructed with a compact TSMT package measuring 2.9 mm in length, 1.6 mm in width, and 850 micrometers in height, it enables space-saving circuit designs. The bidirectional maximum gate-source voltage tolerance of ±12 volts enhances device robustness against voltage spikes. The forward voltage of -1.2 volts supports optimized circuit operation with minimal voltage drops.

This MOSFET is ideal for use in industrial, consumer electronics, and power management designs requiring reliable surface mount transistors with P-Channel configuration. Its compact size and efficient electrical characteristics make it suitable for PCB applications in automotive, manufacturing, and laboratory equipment.

Key technical features are summarized in the key features section below. This product is shipped in reels, ready for automated placement, improving manufacturing efficiency. Type P-Channel MOSFET with enhancement mode operation.

Supports maximum continuous drain current of 2 amperes. Maximum drain-source voltage rated at 20 volts. Compact 3-pin TSMT surface mount package for PCB integration. Maximum power dissipation up to 1 watt ensuring reliable thermal handling.

Low drain-source resistance of 250 milliohms for low conduction losses. Operating temperature range up to 150°C for robust use cases. Typical gate charge at 4.9 nanocoulombs providing fast switching capability. Bidirectional gate-source voltage tolerance of ±12 volts.

Forward voltage drop of -1.2 volts enhancing efficiency in circuits. Explore ROHM MOSFETs and other discrete semiconductor products on EnvMart for advanced electronic component sourcing.