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onsemi NPN Bipolar Transistor 500 mA 45 V 3-Pin SOT-23 Surface Mount BC817-40LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Czech Republic
Brand onsemi
Height 2.64mm
Length 3.04mm
Model BC817-40LT1G
Width 1.11mm
Mount Type Surface
Series BC817-40L
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 250
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum DC collector current of 500 mA.
  • Maximum collector-emitter voltage rating of 45 V.
  • Minimum DC current gain (hFE) of 250 ensures effective amplification.
  • Compact 3-pin SOT-23 surface mount package ideal for low-power applications.
  • Automotive qualified to AEC-Q101 standard, ensuring reliability in automotive environments.
  • Maximum power dissipation is 300 mW for safe operation within thermal limits.
  • Maximum operating temperature up to 150°C supports high-temperature environments.
  • Used for ESD, polarity reversal, data line, and inductive load protection.

Product Description

onsemi BC817-40LT1G is an NPN bipolar transistor designed for general purpose linear and switching applications. Housed in a compact 3-pin SOT-23 surface mount package, it is well-suited for low power electronic circuits and devices requiring surface mount components.

This transistor supports a maximum DC collector current of 500 mA and a maximum collector-emitter voltage of 45 V, making it ideal for a variety of semiconductor applications. It features a minimum DC current gain (hFE) of 250 and a maximum power dissipation rating of 300 mW, allowing efficient and reliable performance under load.

Qualified to the automotive standard AEC-Q101, BC817-40LT1G is suitable for automotive and industrial environments, with a maximum operating temperature of 150°C. The transistor configuration is single NPN with 3 pins suitable for surface mounting, supporting applications like ESD protection, polarity reversal prevention, data line safeguarding, inductive load handling, and steering logic functions.

The physical dimensions measure 3.04 mm in length, 2.64 mm in height, and 1.11 mm in width, fitting compact circuit board designs. Maximum DC Collector Current: 500 mA. Maximum Collector-Emitter Voltage: 45 V. Minimum DC Current Gain (hFE): 250.

Package Type: 3-pin SOT-23 surface mount. Maximum Power Dissipation: 300 mW. Automotive Standard: AEC-Q101 qualified. Maximum Operating Temperature: 150°C. Applications include ESD and polarity protection, and inductive load management.

Compact dimensions for space-saving PCB design.

The transistor is manufactured in the Czech Republic, ensuring adherence to quality manufacturing practices and operational reliability. It is a preferred choice for a broad range of industrial, automotive, and electronic applications requiring a dependable low-power NPN transistor.

Explore further in the onsemi semiconductor series available on EnvMart for comprehensive electronic component solutions.

Explore more products in our Bipolar Transistors category.

onsemi NPN Bipolar Transistor 500 mA 45 V 3-Pin SOT-23 Surface Mount BC817-40LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

This transistor has a maximum collector-emitter voltage rating of 45 V.

The minimum DC current gain (hFE) is 250, which ensures effective amplification.

It comes in a compact 3-pin SOT-23 surface mount package with dimensions of 3.04 mm length, 2.64 mm height, and 1.11 mm width.

The maximum power dissipation for the BC817-40LT1G is 300 mW.

The maximum operating temperature is up to 150°C, allowing it to function in high-temperature environments.

Yes, this model is qualified to the automotive standard AEC-Q101, ensuring reliability in automotive applications.

It is used for ESD protection, polarity reversal prevention, data line safeguarding, and inductive load handling.

The maximum emitter-base voltage (VEBO) is 5 V, and the maximum collector-base voltage (VCBO) is 50 V.

The maximum transition frequency for this transistor is 100 MHz.

This model is manufactured in the Czech Republic, ensuring adherence to quality manufacturing practices.

The transistor configuration is single NPN with 3 pins suitable for surface mounting.

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