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Nexperia NPN Resistor-Equipped Transistor, 100 mA DC Collector Current, 50 V Collector Emitter Voltage, Surface PDTC143EQBZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PDTC143EQBZ |
| Mount Type | Surface |
| Series | PDTC143E |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN1110D-3 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | NPN |
| Maximum Transition Frequency ft | 230MHz |
Key Features
- Supports a maximum DC collector current of 100 mA for moderate power loads.
- Rated for a maximum collector emitter voltage of 50 V ensuring safe operation within this voltage limit.
- Encased in a low-profile DFN1110D-3 package suitable for automated PCB assembly.
- Integrated resistors simplify circuit design and reduce component count.
- Features a high maximum operating temperature up to 150°C for demanding environments.
- Complies with RoHS and automotive industry AEC-Q101 standards for quality and safety.
- Offers a transition frequency of 230 MHz supporting high-speed switching applications.
- Minimum current gain (hFE) is 30 ensuring good amplification characteristics.
Product Description
Nexperia PDTC143EQBZ is an NPN resistor-equipped transistor engineered for surface mount applications in electronic devices. It is housed in an ultra-small DFN1110D-3 plastic package with side-wettable flanks enabling low profile and automated optical inspection compatibility.
This transistor offers a maximum DC collector current of 100 mA and is rated for voltages up to 50 V collector emitter and base-collector. The device is suitable for demanding operating temperatures from -55°C to 150°C making it robust for various industrial and automotive electronics applications.
Designed with integrated resistors, it simplifies circuit layouts by reducing external components, thus lowering overall component count and assembly costs. The high transition frequency of 230 MHz supports fast switching needed in digital circuits, while the minimum DC current gain of 30 ensures effective amplification.
Key uses include controlling IC inputs, switching loads, and providing a cost-effective alternative to BC857 series transistors in digital applications. The compliance with RoHS and AEC-Q101 automotive standards underscores its suitability for automotive-grade and environmentally compliant designs.
Supports 100 mA collector current and 50 V collector emitter voltage capacity. Ultra compact DFN1110D-3 package with 3 pins designed for surface mounting. Built-in resistors for circuit simplification and component count reduction.
High operating temperature range up to 150°C for reliability in harsh environments. Meets RoHS and automotive reliability standards (AEC-Q101). 230 MHz transition frequency suitable for high-speed switching applications.
Minimum DC current gain of 30 for effective transistor operation. Ideal for digital applications including controlling IC inputs and switching.
This transistor is recommended for use in industrial, automotive, telecommunications, and consumer electronics requiring precise switching capabilities with compact form factors. It supports both prototyping and high volume manufacturing processes with its automated-assembly friendly package design.
Explore additional Nexperia semiconductor components in the Bipolar Transistors category on EnvMart to find complementary products for your electronic circuit needs.
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Frequently Asked Questions
The maximum DC collector current for this model is 100 mA, making it suitable for moderate power loads.
This transistor is rated for a maximum collector-emitter voltage of 50 V, ensuring safe operation within this voltage limit.
It is housed in a low-profile DFN1110D-3 package designed for surface mounting, which facilitates automated PCB assembly.
The transition frequency of this model is 230 MHz, which supports high-speed switching applications.
The minimum DC current gain (hFE) for this transistor is 30, ensuring effective amplification characteristics.
It operates within a temperature range of -55°C to 150°C, making it suitable for demanding environments.
Yes, it complies with RoHS and AEC-Q101 automotive industry standards, ensuring quality and safety for automotive applications.
This transistor features a 3-pin configuration, suitable for various circuit designs.
The maximum emitter-base voltage (VEBO) for this transistor is 10 V, which is important for circuit design considerations.
It is suitable for controlling IC inputs, switching loads, and can serve as a cost-effective alternative to BC857 series transistors in digital applications.
The integrated resistors simplify circuit design by reducing the external component count, which can lower overall assembly costs.
This model is an NPN transistor, which is commonly used in various electronic applications.
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