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ROHM Insulated Gate Bipolar Transistor 50 A 650 V 3-Pin TO-247GE Through Hole RGTH00TS65DGC13

Category IGBT Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGTH00TS65DGC13
Mount Type Through Hole
Series RGTH00TS65DGC13
Maximum Operating Temperature 175°C
Package Type TO-247GE
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 50A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Power Dissipation Pd 277W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • Maximum continuous collector current of 50 amperes ensures high power handling capability.
  • Maximum collector emitter voltage rating at 650 volts for high voltage applications.
  • Package type is TO-247GE with a through hole mount for reliable mechanical stability.
  • Supports operating temperatures from -40°C up to 175°C for versatile thermal conditions.
  • Maximum power dissipation of 277 watts enables heavy load processing.
  • High maximum gate emitter voltage of ±30 volts to tolerate signal variances.
  • Maximum collector emitter saturation voltage of 1.6 volts minimizes conduction losses.
  • RoHS compliant ensuring reduction of hazardous substances.

Product Description

The ROHM RGTH00TS65DGC13 is an advanced insulated gate bipolar transistor (IGBT) designed for industrial and commercial power switching applications. Its robust construction with a TO-247GE package and through hole mount type facilitates secure and efficient installation in high power circuits.

Capable of handling a maximum continuous collector current of 50 amperes and withstanding collector emitter voltages up to 650 volts, this IGBT is suited for demanding environments requiring high voltage and current switching reliability. The device supports wide operating temperatures from -40°C to 175°C, providing versatility in harsh working conditions.

With a low maximum collector emitter saturation voltage of 1.6 volts, this IGBT minimizes conduction losses, which improves overall efficiency and thermal management. It also features a high maximum gate emitter voltage tolerance of ±30 volts, allowing for stable control signals and safe operation under electrical stress.

This component complies with RoHS standards, ensuring it meets environmental regulations for hazardous materials. The device’s 3-pin configuration simplifies circuit integration while maintaining optimal electrical performance.

Typical use cases include industrial motor drives, power inverters, renewable energy systems, and other electronic equipment requiring efficient power switching components. The reliability, thermal performance, and electrical characteristics make it ideal for a variety of semiconductor-based designs.

Maximum continuous collector current of 50 amperes. 650 volts maximum collector emitter voltage rating. 277 watts maximum power dissipation for high load capacity. TO-247GE package with through hole mounting for mechanical robustness.

Operating temperature range from -40°C to 175°C. ±30 volts maximum gate emitter voltage for signal tolerance. Low collector emitter saturation voltage of 1.6 volts for efficiency. RoHS compliant for environmental safety.

3-pin design for easy integration. Explore more semiconductor and power electronic components at EnvMart for your industrial and manufacturing needs.

ROHM Insulated Gate Bipolar Transistor 50 A 650 V 3-Pin TO-247GE Through Hole RGTH00TS65DGC13
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 50 amperes.

It has a maximum collector emitter voltage rating of 650 volts, making it suitable for high voltage applications.

This IGBT can handle a maximum power dissipation of 277 watts, allowing for heavy load processing.

It supports an operating temperature range from -40°C to 175°C, providing versatility in various thermal conditions.

The maximum gate emitter voltage tolerance is ±30 volts, which helps in tolerating signal variances.

The maximum collector emitter saturation voltage is 1.6 volts, which minimizes conduction losses for improved efficiency.

This model uses a through hole mounting type, which provides reliable mechanical stability during installation.

The package type is TO-247GE, designed for secure installation in high power circuits.

It has a 3-pin configuration, simplifying circuit integration.

Yes, it is RoHS compliant, ensuring it meets environmental regulations for hazardous substances.

Typical applications include industrial motor drives, power inverters, and renewable energy systems, requiring efficient power switching.

The country of origin for this IGBT is India.

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