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ROHM IGBT 40 A 600 V 3-Pin TO-247GE Through Hole RGCL80TS60DGC13

Category IGBT Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGCL80TS60DGC13
Mount Type Through Hole
Series RGCL80TS60DGC13
Maximum Operating Temperature 175°C
Package Type TO-247GE
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 1.4V
Maximum Power Dissipation Pd 148W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • The IGBT features a maximum continuous collector current of 40 A.
  • It supports a maximum collector-emitter voltage of 600 V.
  • The device has a maximum power dissipation of 148 W.
  • Operates in a temperature range from -40°C to 175°C.
  • Package type is TO-247GE with through hole mount for reliable installation.
  • Maximum gate emitter voltage rated at ±30 V enhances device control.
  • Maximum collector-emitter saturation voltage is 1.4 V ensuring low conduction loss.
  • RoHS compliant with lead-free plating for environmental safety.

Product Description

ROHM RGCL80TS60DGC13 is a high performance Insulated Gate Bipolar Transistor (IGBT) designed for industrial and commercial power electronic applications requiring up to 40 amperes continuous collector current and 600 volts collector emitter voltage. Featuring a TO-247GE through hole package with 3 pins, this IGBT provides reliable and robust mounting options suitable for PCB assemblies.

The device is designed with a low collector-emitter saturation voltage (VceSAT) of 1.4 V, contributing to energy savings and high efficiency in power conversion systems. It supports operation across a wide temperature range from -40°C to 175°C, allowing it to operate effectively in harsh industrial environments.

The RGCL80TS60DGC13 includes a maximum power dissipation rating of 148 watts, making it suitable for applications with considerable power requirements. The maximum gate emitter voltage of ±30 V offers robust gate control and switching capabilities.

This IGBT is RoHS compliant and features lead-free plating, ensuring regulatory compliance and environmental friendliness. The built-in very fast and soft recovery FRED diode enhances switching performance and reduces power losses during operation.

Typical use cases of this ROHM IGBT include industrial motor drives, power inverters, HVAC systems, manufacturing machinery, and other high voltage, high current power electronics applications. The through hole package type enables secure, reliable connection in various PCB and power module designs.

The IGBT has a maximum continuous collector current of 40 A. Supports maximum collector emitter voltage of 600 V. Maximum power dissipation rating is 148 W. Operates within temperature range -40°C to 175°C. Packaged in a TO-247GE through hole mount with 3 pins.

Features maximum gate emitter voltage of ±30 V. Maximum collector emitter saturation voltage of 1.4 V ensures low conduction losses. RoHS compliant with lead-free plating and environmentally safe materials. Soft switching with very fast and soft recovery FRED diode included.

Explore more power semiconductor components and ROHM products on EnvMart for industrial, laboratory, manufacturing, and other technical applications.

ROHM IGBT 40 A 600 V 3-Pin TO-247GE Through Hole RGCL80TS60DGC13
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Frequently Asked Questions

The maximum continuous collector current of this IGBT is 40 A.

It supports a maximum collector-emitter voltage of 600 V.

The maximum power dissipation rating is 148 W.

This IGBT operates within a temperature range of -40°C to 175°C.

The device is packaged in a TO-247GE through hole mount with 3 pins.

The maximum gate-emitter voltage is rated at ±30 V.

The maximum collector-emitter saturation voltage is 1.4 V.

Yes, it is RoHS compliant and features lead-free plating.

Typical applications include industrial motor drives, power inverters, and HVAC systems.

It includes a very fast and soft recovery FRED diode, enhancing switching performance.

The country of origin for this IGBT is India.

The device has a pin count of 3.

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