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Infineon Reverse Conducting Drive IKN03N60RC2ATMA1, 3 A 600 V PG-SOT223

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKN03N60RC2ATMA1
Maximum Operating Temperature 150°C
Package Type PG-SOT223
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Maximum Continuous Collector Current Ic 3A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
Maximum Power Dissipation Pd 5.1W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • The device supports a maximum continuous collector current of 3 A.
  • Maximum collector emitter voltage rating is 600 V for reliable operation.
  • Capable of dissipating up to 5.1 W power, ensuring efficient thermal management.
  • Operates within a minimum temperature of -40°C up to a maximum of 150°C.
  • Features a maximum gate emitter voltage of 20 V for safe gate control.
  • Maximum collector emitter saturation voltage is 2.3 V, enhancing performance efficiency.
  • The package type is PG-SOT223, suitable for power applications.
  • Compliant with RoHS standards ensuring environmental safety.

Product Description

Infineon IKN03N60RC2ATMA1 Reverse Conducting Drive is a high-reliability Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring robust power control and switching performance. Rated for a maximum continuous collector current of 3 A and maximum collector emitter voltage of 600 V, it integrates a monolithic diode enabling improved control and reliability over conventional IGBT types. The device is housed in a compact PG-SOT223 package allowing easy integration onto PCBs.

Operating over a wide temperature range from -40°C to 150°C, it supports demanding industrial environments including power supplies, motor control, and switching applications. Its maximum power dissipation of 5.1 W ensures it efficiently handles heat during operation.

The device features a maximum gate emitter voltage of 20 V, providing safe and controlled gate driving for high-frequency switching. With a low maximum collector emitter saturation voltage of 2.3 V, this IGBT minimizes conduction losses to improve efficiency.

This reverse conducting IGBT enhances circuit compactness by integrating a diode function, reducing component count in power electronics assemblies. It complies with RoHS standards to meet environmental regulations for electronic components manufacturing.

Typical applications include industrial control systems, power inverters, lighting control, and various electronics projects requiring reliable discrete semiconductor switches. The device supports a maximum continuous collector current of 3 A.

Maximum collector emitter voltage rating is 600 V for reliable operation. Capable of dissipating up to 5.1 W power, ensuring efficient thermal management. Operates within a minimum temperature of -40°C up to a maximum of 150°C.

Features a maximum gate emitter voltage of 20 V for safe gate control. Maximum collector emitter saturation voltage is 2.3 V, enhancing performance efficiency. The package type is PG-SOT223, suitable for power applications.

Compliant with RoHS standards ensuring environmental safety. Non Automotive standard compliant, designed for industrial semiconductor uses.

Explore our extensive catalog of semiconductors and discrete power devices at EnvMart for quality industrial electronic components designed for performance and safety in your applications.

Infineon Reverse Conducting Drive IKN03N60RC2ATMA1, 3 A 600 V PG-SOT223
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Frequently Asked Questions

The maximum continuous collector current for this model is 3 A.

It has a maximum collector emitter voltage rating of 600 V.

This unit is capable of dissipating up to 5.1 W of power.

It operates within a temperature range of -40°C to 150°C.

The maximum gate emitter voltage is 20 V.

The maximum collector emitter saturation voltage is 2.3 V.

This device is housed in a PG-SOT223 package.

Yes, it complies with RoHS standards for environmental safety.

Typical applications include industrial control systems, power inverters, and lighting control.

The country of origin for this model is India.

It is an Insulated Gate Bipolar Transistor (IGBT) designed for power control and switching performance.

Key features include a maximum continuous collector current of 3 A, a maximum collector emitter voltage of 600 V, and a maximum power dissipation of 5.1 W.

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