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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN03N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Collector Current Ic | 3A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 5.1W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon IKN03N60RC2ATMA1 Reverse Conducting Drive is a high-reliability Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring robust power control and switching performance. Rated for a maximum continuous collector current of 3 A and maximum collector emitter voltage of 600 V, it integrates a monolithic diode enabling improved control and reliability over conventional IGBT types. The device is housed in a compact PG-SOT223 package allowing easy integration onto PCBs.
Operating over a wide temperature range from -40°C to 150°C, it supports demanding industrial environments including power supplies, motor control, and switching applications. Its maximum power dissipation of 5.1 W ensures it efficiently handles heat during operation.
The device features a maximum gate emitter voltage of 20 V, providing safe and controlled gate driving for high-frequency switching. With a low maximum collector emitter saturation voltage of 2.3 V, this IGBT minimizes conduction losses to improve efficiency.
This reverse conducting IGBT enhances circuit compactness by integrating a diode function, reducing component count in power electronics assemblies. It complies with RoHS standards to meet environmental regulations for electronic components manufacturing.
Typical applications include industrial control systems, power inverters, lighting control, and various electronics projects requiring reliable discrete semiconductor switches. The device supports a maximum continuous collector current of 3 A.
Maximum collector emitter voltage rating is 600 V for reliable operation. Capable of dissipating up to 5.1 W power, ensuring efficient thermal management. Operates within a minimum temperature of -40°C up to a maximum of 150°C.
Features a maximum gate emitter voltage of 20 V for safe gate control. Maximum collector emitter saturation voltage is 2.3 V, enhancing performance efficiency. The package type is PG-SOT223, suitable for power applications.
Compliant with RoHS standards ensuring environmental safety. Non Automotive standard compliant, designed for industrial semiconductor uses.
Explore our extensive catalog of semiconductors and discrete power devices at EnvMart for quality industrial electronic components designed for performance and safety in your applications.
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