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Nexperia Small Signal NPN Transistor 200 mA 40 V 3-Pin SOT-23 PMBT3904,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBT3904,215
Width 2.5mm
Mount Type Surface
Series PMBT3904
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz
onsemi MMBT3904LT1G Transistor, 200 mA NPN, 40 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Supports maximum collector current of 200 mA for low power switching.
  • Maximum collector-emitter voltage of 40 V suitable for various electronic circuits.
  • Compact SOT-23 surface mount package with 3 pins for easy PCB mounting.
  • Maximum power dissipation of 250 mW ensures stable operation in applications.
  • High minimum DC current gain (hFE) of 100 for efficient amplification.
  • Broad operating temperature range from -65°C to 150°C.
  • Maximum transition frequency (ft) of 300 MHz for high-speed switching.
  • Manufactured in Malaysia ensuring quality and reliability.

Product Description

Nexperia PMBT3904,215 transistor is a small signal NPN bipolar transistor designed for low power and high frequency switching applications. It supports a maximum DC collector current of 200 mA and can withstand collector-emitter voltages up to 40 V, making it suitable for various electronic circuit designs and signal amplification tasks.

The device comes in a compact 3-pin SOT-23 surface mount package, which is ideal for space-constrained PCB layouts. Its maximum power dissipation rating of 250 mW ensures reliable operation when driven within specified limits. The transistor configuration is single, optimized for discrete semiconductor use in analog and digital circuits.

This transistor offers a high minimum DC current gain of 100 and a maximum transition frequency of 300 MHz, allowing efficient amplification and switching in communication, industrial, and consumer electronic devices. It operates robustly across a broad temperature range from -65°C to 150°C, supporting applications in harsh environmental conditions.

Dimensions of the package are 3 mm length, 2.5 mm width, and 1.1 mm height, enabling compatibility with modern automated assembly processes. Additional electrical maximum voltage ratings include collector-base voltage up to 60 V and emitter-base voltage of 6 V.

It is widely used in electronic component assembly, power connectors, and semiconductor device applications in industrial, commercial, and consumer product environments. Supports maximum collector current of 200 mA for low power switching.

Maximum collector-emitter voltage of 40 V suitable for various electronic circuits. Compact SOT-23 surface mount package with 3 pins for easy PCB mounting. Maximum power dissipation of 250 mW ensures stable operation in applications.

High minimum DC current gain (hFE) of 100 for efficient amplification. Broad operating temperature range from -65°C to 150°C. Maximum transition frequency (ft) of 300 MHz for high-speed switching. Manufactured in Malaysia ensuring quality and reliability.

This product is ideal for industrial electronics, communication devices manufacturing, consumer electronics, and laboratory applications. Explore other quality Bipolar Transistors and related semiconductor products on EnvMart.

Nexperia Small Signal NPN Transistor 200 mA 40 V 3-Pin SOT-23 PMBT3904,215
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Frequently Asked Questions

The maximum collector current for this NPN transistor is 200 mA, suitable for low power switching applications.

This model has a maximum collector-emitter voltage rating of 40 V, making it suitable for various electronic circuits.

The SOT-23 package dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum power dissipation for this transistor is 250 mW, ensuring stable operation in applications.

It operates across a broad temperature range from -65°C to 150°C, suitable for harsh environmental conditions.

The minimum DC current gain (hFE) is 100, allowing for efficient amplification.

The maximum transition frequency (ft) is 300 MHz, which supports high-speed switching applications.

This model supports surface mounting, making it suitable for compact PCB layouts.

The maximum emitter-base voltage (VEBO) rating is 6 V for this transistor.

The configuration of this transistor is single, optimized for discrete semiconductor use.

The maximum collector-base voltage (VCBO) rating is 60 V for this model.

This product is manufactured in Malaysia, ensuring quality and reliability.

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