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Infineon N-Channel IGBT 80 A 650 V, 3-Pin TO-247 Through Hole, High Speed Fifth Generation IKW50N65EH5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 41.42mm |
| Model | IKW50N65EH5XKSA1 |
| Width | 16.13mm |
| Mount Type | Through Hole |
| Series | High Speed Fifth Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 275W |
| Maximum Gate Emitter Voltage VGEO | 30 V |
Key Features
- High speed fifth generation series for efficient switching.
- Maximum power dissipation of 275W allows for sustained operation.
- Operating temperature range from -40°C to 175°C supports harsh environments.
- Maximum gate emitter voltage of 30 V provides strong gate drive margins.
- Low collector emitter saturation voltage (1.65V) reduces conduction losses.
- Suitable for industrial motor drives and high voltage power conversion.
- Designed for through-hole mounting with TO-247 package for easy heatsinking.
- Compliant with JEDEC standards for quality assurance.
Product Description
Infineon IKW50N65EH5XKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed to switch and control high-current, high-voltage loads effectively. Rated for a continuous collector current of 80 A and a maximum collector emitter voltage of 650 V, this device supports heavy-duty power electronic applications requiring robust operation.
The transistor is part of Infineon's High Speed Fifth Generation series, which emphasizes efficient switching and thermal management. With a maximum power dissipation rating of 275W, it can sustain substantial thermal loads, making it ideal for demanding environments. The device supports operation across a wide temperature range from -40°C up to 175°C, ensuring reliability in industrial, HVAC, and manufacturing settings.
Featuring a low maximum collector emitter saturation voltage of 1.65V, conduction losses are minimized, improving overall system efficiency. The gate emitter voltage limit of 30 V allows for strong gate drive margins to maintain consistent performance without damage risks.
The IKW50N65EH5XKSA1 comes in a TO-247 package, designed for through-hole mounting and effortless integration with heatsinking solutions, enhancing device cooling during operation. It adheres to JEDEC standards, providing quality and performance consistency.
High speed switching with reduced conduction losses. Robust thermal handling for high power applications. Wide operating temperature range for diverse industrial environments. Reliable through-hole mounting package for ease of installation.
Compliance with industry standards for semiconductor devices.
This IGBT is well suited for use in inverter stages of industrial drives, high-voltage power conversion modules, large motor controllers, switch-mode power supplies in heavy-duty systems, and rack-mounted power electronics assemblies.
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Frequently Asked Questions
The maximum continuous collector current of the IKW50N65EH5XKSA1 is 80 A.
This IGBT has a maximum collector emitter voltage of 650 V.
It operates within a temperature range of -40°C to 175°C.
The maximum power dissipation for this model is 275 W.
The maximum gate emitter voltage for the IKW50N65EH5XKSA1 is 30 V.
The maximum collector emitter saturation voltage is 1.65 V, which helps reduce conduction losses.
It comes in a TO-247 package designed for through-hole mounting.
This model features a 3-pin configuration.
It is part of the High Speed Fifth Generation series from Infineon.
Yes, it complies with JEDEC standards for quality assurance.
The dimensions are 41.42 mm in length and 16.13 mm in width.
It is suitable for industrial motor drives and high voltage power conversion applications.
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