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Infineon N-Channel IGBT 6.5 A 600 V 3-Pin TO-252 Surface Mount IKD06N60RFATMA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKD06N60RFATMA1
Mount Type Surface
Series TRENCHSTOP RC-DrivesFast
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -40°C
Standards/Approvals JEDEC
Pin Count 3
Maximum Continuous Collector Current Ic 6.5A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
Channel Type N
Maximum Power Dissipation Pd 53.6W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • This IGBT features a maximum power dissipation of 53.6 W.
  • Designed with a maximum gate emitter voltage of 20 V for robust control.
  • Maximum collector emitter saturation voltage is 2.2 V, ensuring efficient switching.
  • Operates reliably between temperatures of -40°C to 175°C.
  • Complies with JEDEC standards and belongs to the TRENCHSTOP RC-DrivesFast series.
  • Short circuit capability of 5 microseconds enhances device durability.
  • Monolithically integrated IGBT and diode reduce thermal cycling for higher reliability.
  • Optimized for operation in switching frequencies from 4 kHz to 30 kHz with low EMI generation.

Product Description

The Infineon IKD06N60RFATMA1 is a high-quality N-Channel IGBT designed for industrial and power electronics applications requiring efficient switching and high current capacity. With a continuous collector current rating of 6.5 A and a maximum collector emitter voltage of 600 V, it is suitable for medium power circuits.

This device is housed in a TO-252 3-pin surface mount package, allowing compact PCB designs while maintaining good thermal performance with a maximum power dissipation rating of 53.6 W. The maximum gate emitter voltage of 20 V ensures safe gate control during operation. Its collector emitter saturation voltage of 2.2 V contributes to lower conduction losses and better overall efficiency.

Operating reliably within a wide temperature range from -40°C to 175°C, the IKD06N60RFATMA1 meets JEDEC standards and is part of the TRENCHSTOP RC-DrivesFast series, which provides benefits like smooth switching, low EMI, and a short circuit enduring time of 5 microseconds. Its monolithically integrated IGBT and diode construction minimizes thermal cycling stresses, enhancing product durability and reliability.

This IGBT is ideal for industrial power electronics, motor drives, inverters, and other applications requiring robust semiconductor performance in compact form factors. Its optimized switching range from 4 kHz to 30 kHz fits well within many modern PWM applications.

This IGBT features a maximum power dissipation of 53.6 W. Designed with a maximum gate emitter voltage of 20 V for robust control. Maximum collector emitter saturation voltage is 2.2 V, ensuring efficient switching. Operates reliably between temperatures of -40°C to 175°C.

Complies with JEDEC standards and belongs to the TRENCHSTOP RC-DrivesFast series. Short circuit capability of 5 microseconds enhances device durability. Monolithically integrated IGBT and diode reduce thermal cycling for higher reliability.

Optimized for operation in switching frequencies from 4 kHz to 30 kHz with low EMI generation. Explore our extensive range of semiconductors and industrial components at EnvMart for reliable and quality solutions.

Infineon N-Channel IGBT 6.5 A 600 V 3-Pin TO-252 Surface Mount IKD06N60RFATMA1
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Frequently Asked Questions

The maximum continuous collector current for the IKD06N60RFATMA1 is 6.5 A.

It has a maximum collector emitter voltage of 600 V.

The maximum power dissipation for this IGBT is 53.6 W.

The maximum gate emitter voltage is 20 V, ensuring robust control during operation.

This model operates reliably between -40°C and 175°C.

The maximum collector emitter saturation voltage is 2.2 V, which helps in achieving efficient switching.

The IKD06N60RFATMA1 is housed in a TO-252 3-pin surface mount package.

It belongs to the TRENCHSTOP RC-DrivesFast series, designed for efficient switching.

This IGBT has a short circuit capability of 5 microseconds, enhancing its durability.

The device complies with JEDEC standards.

It is optimized for operation in switching frequencies from 4 kHz to 30 kHz with low EMI generation.

The IKD06N60RFATMA1 features an N-channel configuration.

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